Patents by Inventor Tuqiang Ni
Tuqiang Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20060137821Abstract: An inductively coupled plasma processing apparatus includes a chamber having a top opening. A window seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector for protecting the inner surface of the window is disposed within the chamber. The window protector is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.Type: ApplicationFiled: December 28, 2004Publication date: June 29, 2006Applicant: LAM RESEARCH COPORATIONInventors: Arthur Howald, Tuqiang Ni
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Publication number: 20060112878Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.Type: ApplicationFiled: November 16, 2005Publication date: June 1, 2006Applicant: Lam Research CorporationInventors: Tuqiang Ni, Wenli Collison
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Publication number: 20060105575Abstract: A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.Type: ApplicationFiled: December 15, 2005Publication date: May 18, 2006Applicant: Lam Research CorporationInventors: Andrew Bailey, Tuqiang Ni
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Patent number: 7009281Abstract: A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.Type: GrantFiled: December 22, 2003Date of Patent: March 7, 2006Assignee: Lam CorporationInventors: Andrew D. Bailey, III, Tuqiang Ni
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Patent number: 6897156Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.Type: GrantFiled: January 21, 2003Date of Patent: May 24, 2005Assignee: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Tom Choi, Frank Y. Lin
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Publication number: 20050070105Abstract: A system and method of processing a substrate including loading a substrate into a plasma chamber and setting a pressure of the plasma chamber to a pre-determined pressure set point. Several inner surfaces that define a plasma zone are heated to a processing temperature of greater than about 200 degrees C. A process gas is injected into the plasma zone to form a plasma and the substrate is processed.Type: ApplicationFiled: December 22, 2003Publication date: March 31, 2005Applicant: Lam Research CorporationInventors: Andrew Bailey, Tuqiang Ni
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Patent number: 6855567Abstract: A method for determining an endpoint for etching a layer includes steps of estimating the etch endpoint and, during etch, directing radiant energy at two or more wavelengths onto the layer to be etched, detecting the last intensity maximum reflected at a first wavelength prior to the estimated etch endpoint, and detecting the intensity maximum reflected at a second wavelength first occurring after the last intensity maximum at the first wavelength.Type: GrantFiled: May 31, 2000Date of Patent: February 15, 2005Assignee: Lam Research CorporationInventors: Tuqiang Ni, Andrew Lui, Chung-Ho Huang, Weinan Jiang
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Publication number: 20040154747Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.Type: ApplicationFiled: February 3, 2004Publication date: August 12, 2004Applicant: LAM RESEARCH CORPORATIONInventors: Tuqiang Ni, Wenli Collison, David Hemker, Lumin Li
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Publication number: 20040144493Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.Type: ApplicationFiled: January 14, 2004Publication date: July 29, 2004Applicant: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Brian K. McMillin
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Publication number: 20040118344Abstract: A system and method for controlling plasma. The system includes a semiconductor chamber comprising a powered electrode, another electrode, and an adjustable coupling to ground circuit. The powered electrode is configured to receive a wafer or substrate. There is at least one grounded electrode configured to generate an electrical connection with the powered electrode. At least one of the grounded electrodes is electrically coupled to the adjustable coupling to ground circuit. The adjustable coupling to ground circuit is configured to modify the impedance of the grounded electrode. The ion energy of the plasma is controlled by the adjustable coupling to ground circuit.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Applicant: Lam Research CorporationInventors: Tuqiang Ni, Wenli Collison
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Patent number: 6746961Abstract: A semiconductor manufacturing process wherein high aspect ratio deep openings are plasma etched in a dielectric layer using an etchant gas which includes a fluorocarbon, a sulfur-containing gas, an oxygen-containing gas and an optional carrier gas. The etchant gas can include CxFyHz such as C4F8, SO2, O2 and Ar. The combination of the sulfur-containing gas and the oxygen-containing gas provides profile control of the deep openings.Type: GrantFiled: June 19, 2001Date of Patent: June 8, 2004Assignee: Lam Research CorporationInventors: Tuqiang Ni, Lumin Li
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Patent number: 6716303Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.Type: GrantFiled: October 13, 2000Date of Patent: April 6, 2004Assignee: Lam Research CorporationInventors: Tuqiang Ni, Wenli Collison, David Hemker, Lumin Li
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Patent number: 6709547Abstract: A process chamber for a plasma processing apparatus is provided in which etch uniformity is maintained in both chemically driven and ion driven processes. The process chamber utilizes a barrier whose position relative to a wafer may be changed. During chemically driven processes, the barrier may be established so as to substantially prevent the diffusion of neutral reactants from regions outside the perimeter of the wafer. During ion driven processes, the barrier may be moved (e.g., withdrawn) so as to not compromise the ion driven etch.Type: GrantFiled: June 30, 1999Date of Patent: March 23, 2004Assignee: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Brian K. McMillin
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Patent number: 6622286Abstract: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (CPU) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment.Type: GrantFiled: June 30, 2000Date of Patent: September 16, 2003Assignee: Lam Research CorporationInventors: Tuan Ngo, Farro Kaveh, Connie Lam, Chung-Ho Huang, Tuqiang Ni, Anthony T. Le, Steven Salkow
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Patent number: 6617257Abstract: A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.Type: GrantFiled: March 30, 2001Date of Patent: September 9, 2003Assignee: Lam Research CorporationInventors: Tuqiang Ni, Weinan Jiang, Conan Chiang, Frank Y. Lin, Chris Lee, Dai N. Lee
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Publication number: 20030106645Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.Type: ApplicationFiled: January 21, 2003Publication date: June 12, 2003Applicant: LAM RESEARCH CORPORATIONInventors: Tuqiang Ni, Kenji Takeshita, Tom Choi, Frank Y. Lin
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Patent number: 6531029Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic; fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.Type: GrantFiled: June 30, 2000Date of Patent: March 11, 2003Assignee: Lam Research CorporationInventors: Tuqiang Ni, Kenji Takeshita, Tom Choi, Frank Y. Lin
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Publication number: 20030045114Abstract: A semiconductor manufacturing process wherein high aspect ratio deep openings are plasma etched in a dielectric layer using an etchant gas which includes a fluorocarbon, a sulfur-containing gas, an oxygen-containing gas and an optional carrier gas. The etchant gas can include CxFyHz such as C4F8, SO2, O2 and Ar. The combination of the sulfur-containing gas and the oxygen-containing gas provides profile control of the deep openings.Type: ApplicationFiled: June 19, 2001Publication date: March 6, 2003Inventors: Tuqiang Ni, Lumin Li
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Patent number: 6527911Abstract: A plasma processing chamber is provided. The plasma processing chamber includes a bottom electrode configured to support a substrate and a top electrode located over the bottom electrode. The plasma processing chamber further includes a plasma confinement assembly designed to transition between a closed orientation and an open orientation. In the closed orientation, the plasma confinement assembly defines a first volume for plasma during processing, and in the open orientation, the plasma confinement assembly defines a second volume for plasma during processing which is larger than the first volume.Type: GrantFiled: June 29, 2001Date of Patent: March 4, 2003Assignee: Lam Research CorporationInventors: Bi-Ming Yen, Tuqiang Ni, Lumin Li, David Hemker
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Patent number: 6526355Abstract: A process chamber with a computer system that controls the process chamber is connected to one or more spectrometers. The spectrometers may be part of an interferometer or may be an optical emission spectrometer. The spectrometers may be CCD or photodiode arrays of 2,048 elements. An input board forms part of the computer system and is directly connected to the spectrometers. The input board provides data from the spectrometers to dual port memory, which is directly accessible to the CPU of the computer system. The use of a state machine and adder on the input board allows computation and placement of the data from the spectrometers on to the dual port memory, so that the CPU is not needed for such placement.Type: GrantFiled: March 30, 2000Date of Patent: February 25, 2003Assignee: Lam Research CorporationInventors: Tuqiang Ni, Tuan Ngo, Chung-Ho Huang, Andrew Lui, Farro Kaveh