Patents by Inventor Turusan Kolcuoglu
Turusan Kolcuoglu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240039276Abstract: Systems, devices, and methods related to electrostatic discharge (ESD) protection in radio frequency (RF) switch circuitry are provided. An electrostatic discharge (ESD)-protected radio frequency (RF) switch circuitry includes a common port; at least one terminal port; a switch circuitry coupled between the common port and the at least one terminal port, wherein the switch circuitry comprises one or more transistors connected in a stacked configuration; and a first ESD protection circuitry coupled between a gate of a first transistor of the one or more transistors and a driver circuitry for the first transistor.Type: ApplicationFiled: July 28, 2022Publication date: February 1, 2024Applicant: Analog Devices International Unlimited CompanyInventors: Alp OGUZ, Turusan KOLCUOGLU, Celal AVCI, Atilim Ergul
-
Patent number: 11764824Abstract: System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.Type: GrantFiled: November 4, 2021Date of Patent: September 19, 2023Assignee: Analog Devices International Unlimited CompanyInventors: Huseyin Kayahan, Berktug Ustundag, Alp Oguz, Turusan Kolcuoglu, Yusuf Atesal
-
Patent number: 11677392Abstract: Passive gate bias network topologies are implemented for stacked FET switch structures, which improve the settling time and low cut-off frequency for both DC and non-DC operation. DC capable stacked switch bias structures provide gate and bulk bias voltages, using input DC voltages, which are coupled to the gate terminals and the bulk terminals of the stacked switches. The DC coupling can be achieved using resistors, or a combination of resistors and diodes. An exemplary SPST switch includes a series stacked switch in combination with a shunt stacked switch, which can be controlled between alternating states. For low cut-off frequency improvement structures, an input signal is coupled to the gate terminals and bulk terminals of the switches in the stacked switches, using a DC block capacitor and resistors. The low cut-off of the bulk can be improved by connecting the bulk terminal of one switch to the opposite polarity switch.Type: GrantFiled: April 16, 2021Date of Patent: June 13, 2023Assignee: Analog Devices International Unlimited CompanyInventors: Ercan Kaymaksut, Mehmet Arda Akkaya, Murat Davulcu, Turusan Kolcuoglu
-
Publication number: 20230139103Abstract: System and methods for reducing nonlinearity in radio frequency (RF) circuitries (e.g., RF switch circuitry and/or RF amplifier circuitry) are provided. A high-linearity RF integrated circuit device includes an input port; an output port; nonlinear circuitry arranged on a signal path between the input port and the output port; a shunt path including signal adjustment circuitry; and adjustable nonlinearity generation circuitry coupled to the signal adjustment circuitry, the adjustable nonlinearity generation circuitry including one or more metal-oxide-semiconductor (MOS) devices; and at least one nonlinearity generation activation element connected in parallel with a source terminal and a drain terminal of a first MOS device of the one or more MOS devices and responsive to an activation control signal. The nonlinear circuitry may include at least one of switching circuitry or amplifier circuitry. The shunt path may be coupled to the input port or the output port.Type: ApplicationFiled: November 4, 2021Publication date: May 4, 2023Applicant: Analog Devices International Unlimited CompanyInventors: Huseyin KAYAHAN, Berktug USTUNDAG, Alp OGUZ, Turusan KOLCUOGLU, Yusuf ATESAL
-
Publication number: 20220337233Abstract: Passive gate bias network topologies are implemented for stacked FET switch structures, which improve the settling time and low cut-off frequency for both DC and non-DC operation. DC capable stacked switch bias structures provide gate and bulk bias voltages, using input DC voltages, which are coupled to the gate terminals and the bulk terminals of the stacked switches. The DC coupling can be achieved using resistors, or a combination of resistors and diodes. An exemplary SPST switch includes a series stacked switch in combination with a shunt stacked switch, which can be controlled between alternating states. For low cut-off frequency improvement structures, an input signal is coupled to the gate terminals and bulk terminals of the switches in the stacked switches, using a DC block capacitor and resistors. The low cut-off of the bulk can be improved by connecting the bulk terminal of one switch to the opposite polarity switch.Type: ApplicationFiled: April 16, 2021Publication date: October 20, 2022Applicant: Analog Devices International Unlimited CompanyInventors: Ercan Kaymaksut, Mehmet Arda Akkaya, Murat Davulcu, Turusan Kolcuoglu
-
Patent number: 10778206Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.Type: GrantFiled: March 20, 2018Date of Patent: September 15, 2020Assignee: Analog Devices Global Unlimited CompanyInventors: Turusan Kolcuoglu, Huseyin Kayahan, Yusuf Alperen Atesal
-
Publication number: 20190296726Abstract: Apparatus and methods for biasing radio frequency (RF) switches to achieve fast switching are disclosed herein. In certain configurations, a switch bias circuit generates a switch control voltage for turning on or off a switch that handles RF signals. The switch bias circuit provides the switch control voltage to a control input of the switch by way of a resistor. Additionally, the switch bias circuit pulses the switch control voltage when turning on or off the switch to thereby shorten switching time. Thus, the switch can be turned on or off quickly, which allows the switch to be available for use soon after the state of the switch has been changed.Type: ApplicationFiled: March 20, 2018Publication date: September 26, 2019Inventors: Turusan Kolcuoglu, Huseyin Kayahan, Yusuf Alperen Atesal
-
Publication number: 20190295968Abstract: A package is disclosed. The package includes a carrier that comprises a first conductive layer on a first side and a second conductive layer on a second side opposite the first side. The first conductive layer comprises wire bonding pads. The package also includes a semiconductor die that is flip chip mounted on the first side of the carrier.Type: ApplicationFiled: August 8, 2018Publication date: September 26, 2019Inventors: Bilge Bayrakci, Abdullah Celik, Winslow Round, Santosh Anil Kudtarkar, Yusuf Atesal, Turusan Kolcuoglu
-
Patent number: 9893025Abstract: A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.Type: GrantFiled: September 11, 2015Date of Patent: February 13, 2018Assignee: Analog Devices GlobalInventors: Yusuf Alperen Atesal, Turusan Kolcuoglu
-
Patent number: 9667244Abstract: A control circuit is provided for controlling the voltage at the gate terminal of a field effect transistor acting as a switch. The voltage, at for example, the source terminal of the transistor can be provided to a low pass filter and is then voltage translated to provide the gate signal. The filtering can be arranged so as to compensate for the effect of parasitic capacitances within the transistor, thereby linearizing its frequency response. The voltage translation can help to limit voltage differences between the gate and channel of the transistor. This can be significant as relatively fast transistors, as might be used in microwave circuits, may fail with relatively modest voltages at their gates.Type: GrantFiled: November 16, 2015Date of Patent: May 30, 2017Assignee: ANALOG DEVICES GLOBALInventors: Bilal Tarik Cavus, Turusan Kolcuoglu, Yusuf Alperen Atesal
-
Patent number: 9374124Abstract: Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.Type: GrantFiled: October 3, 2014Date of Patent: June 21, 2016Assignee: ANALOG DEVICES GLOBALInventors: Turusan Kolcuoglu, Bilal Tarik Cavus, Yusuf Alperen Atesal
-
Publication number: 20160099220Abstract: A high isolation wideband switch is disclosed. In one aspect, the switch includes an integrated circuit package having an integrated circuit die with a first plurality of leads that is positioned on a package substrate that has a second plurality of leads. The first leads of the integrated circuit die are connected to the second the leads of the package substrate via bond wires and a first electrical coupling occurs between the first leads and the integrated circuit die in response to an RF signal applied to the integrated circuit package. The bond wires have a second electrical coupling in response to the RF signal and the bond wires are arranged such that the second electrical coupling is matched to the first electrical coupling within a selected frequency band so as to reduce the overall electrical coupling of the integrated circuit package for RF signals within the selected frequency band.Type: ApplicationFiled: September 11, 2015Publication date: April 7, 2016Inventors: Yusuf Alperen Atesal, Turusan Kolcuoglu
-
Publication number: 20160099743Abstract: Apparatus and methods for radio frequency (RF) switches are provided herein. In certain implementations, an RF switching circuit includes an adaptive switch bias circuit that controls gate and/or channel voltages of one or more field effect transistor (FET) switches. Additionally, the adaptive switch bias circuit is powered by a power high supply voltage and a power low supply voltage, and can be used to selectively turn on or off the FET switches based on a state of one or more switch enable signals. The adaptive switch bias circuit adaptively biases that gate and/or channel voltages of the FET switches based on a voltage difference between the power high and power low supply voltages to provide switch biasing suitable for use with two or more different power supply voltage levels.Type: ApplicationFiled: October 3, 2014Publication date: April 7, 2016Inventors: Turusan Kolcuoglu, Bilal Tarik Cavus, Yusuf Alperen Atesal
-
Publication number: 20160093579Abstract: Aspects of this disclosure relate to a termination circuit configured to mitigate crosstalk from a radio frequency (RF) input/output (I/O) path to a second I/O path, such as a digital I/O path. Such crosstalk can be due to coupling between adjacent bond wires, for example. The termination circuit can include a low impedance loss path, such as a series RC shunt circuit. According to certain embodiments, an electrostatic discharge (ESD) protection circuit can be in parallel with the termination circuit.Type: ApplicationFiled: September 30, 2014Publication date: March 31, 2016Inventors: Yusuf Alperen Atesal, Turusan Kolcuoglu
-
Patent number: 9281285Abstract: Aspects of this disclosure relate to a termination circuit configured to mitigate crosstalk from a radio frequency (RF) input/output (I/O) path to a second I/O path, such as a digital I/O path. Such crosstalk can be due to coupling between adjacent bond wires, for example. The termination circuit can include a low impedance loss path, such as a series RC shunt circuit. According to certain embodiments, an electrostatic discharge (ESD) protection circuit can be in parallel with the termination circuit.Type: GrantFiled: September 30, 2014Date of Patent: March 8, 2016Assignee: Analog Devices GlobalInventors: Yusuf Alperen Atesal, Turusan Kolcuoglu