Patents by Inventor Tushar K. Ghos

Tushar K. Ghos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Systems and methods for co-doping wide band gap materials
    Patent number: 8394711
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: March 12, 2013
    Assignee: The Curators of the University of Missouri
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, Jr., Dabir S. Viswanath, Sudarshan Loyalka
  • SYSTEMS AND METHODS FOR CO-DOPING WIDE BAND GAP MATERIALS
    Publication number: 20110237057
    Abstract: Various embodiments of the present disclosure provide a method of simultaneously co-doping a wide band gap material with p-type and n-type impurities to create a p-n junction within the resulting wide band gap composite material. The method includes disposing a sample comprising a dopant including both p-type and n-type impurities between a pair of wide band gap material films and disposing the sample between a pair of opposing electrodes; and subjecting the sample to a preselected vacuum; and heating the sample to a preselected temperature; and applying a preselected voltage across the sample; and subjecting the sample to at least one laser beam having a preselected intensity and a preselected wavelength, such that the p-type and n-type impurities of the dopant substantially simultaneously diffuse into the wide band gap material films resulting in a wide band gap compound material comprising a p-n junction.
    Type: Application
    Filed: June 6, 2011
    Publication date: September 29, 2011
    Applicant: THE CURATORS OF THE UNIVERSITY OF MISSOURI
    Inventors: Mark A. Prelas, Tushar K. Ghos, Robert V. Tompson, JR., Dabir S. Viswanath, Sudarshan Loyalka