Abstract: Methods and apparatus are provided for non-volatile semiconductor devices. The apparatus comprises a substrate having therein a source region and a drain region separated by a channel region extending to a first surface of the substrate, and a multilayered gate structure containing nano-crystals located above the channel region. The gate structure comprises, a gate dielectric substantially in contact with the channel region, spaced-apart nano-crystals disposed in the gate dielectric, one or more impurity blocking layers overlying the gate dielectric and a gate conductor layer overlying the one more impurity blocking layers. The blocking layer nearest the gate conductor can also be used to adjust the threshold voltage of the device and/or retard dopant out-diffusion from the gate conductor layer.

Abstract: A semiconductor device includes a substrate, a multilayered assembly of high k dielectric materials formed on the substrate, and a first conducting material formed on the upper layer of the assembly of high k dielectric materials. The multilayered high k dielectric assembly includes a lower layer, an upper layer, and a diffusion barrier layer formed between the lower and upper dielectric layers. The diffusion barrier layer has a greater affinity for oxygen than the upper and lower layers. The first conducting layer includes a conducting compound of at least a metal element and oxygen.

Abstract: A method for forming nanoclusters includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate, exposing the semiconductor substrate to a first flux of atoms to form first nuclei on the dielectric layer, exposing the first nuclei to a first inert atmosphere after exposing the semiconductor substrate to the first flux, and exposing the semiconductor substrate to a second flux of atoms to form second nuclei after exposing the first nuclei to an inert atmosphere.