Patents by Inventor Tuyen Nguyen Duc

Tuyen Nguyen Duc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sensor with field effect transistor having the gate dielectric consisting of a layer of lipids and method of fabricating this transistor
    Patent number: 9018740
    Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: April 28, 2015
    Assignee: Centre National de la Recherche Scientifique (C.N.R.S)
    Inventors: Anne Charrier, Hervé Dallaporta, Tuyen Nguyen Duc
  • SENSOR WITH FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THIS TRANSISTOR
    Publication number: 20140264473
    Abstract: A field effect transistor (1) including: a semiconducting substrate (2) having two areas doped with electric charge carriers forming a source area (3) and a drain area (4), respectively; a dielectric layer positioned above the semiconducting substrate (2) between the source (3) and the drain (4) and forming the gate dielectric (9) of the field effect transistor (1); a gate (11) consisting of a reference electrode (8) and of a conductive solution (10), the solution (10) being in contact with the gate dielectric (9); and the gate dielectric (9) consists of a layer of lipids (13) in direct contact with the semiconducting layer (2). The invention also relates to a method for manufacturing such a field effect transistor (1) is disclosed.
    Type: Application
    Filed: November 30, 2012
    Publication date: September 18, 2014
    Inventors: Anne Charrier, Hervé Dallaporta, Tuyen Nguyen Duc