Patents by Inventor Tuz-Ching Tsai

Tuz-Ching Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and composite hard mask for forming deep trenches in a semiconductor substrate
    Patent number: 7138338
    Abstract: A method and structure for forming deep trenches in a semiconductor substrate is provided. The method comprises: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a pad nitride layer on the pad oxide layer; forming a borophosphosilicate glass layer on the pad nitride layer; forming a borosilicate glass layer on the borophosphosilicate glass layer; and forming deep trenches through the borosilicate glass layer, through the borophosphosilicate glass layer, through the pad nitride, through the pad oxide, and into the semiconductor substrate. The borosilicate glass layer and the borophosphosilicate glass layer function as a composite hard mask in forming the deep trenches. With the borophosphosilicate glass layer, the composite hard mask can be easily removed by dry etch process using hydrogen fluoride vapor after the deep trenches have been formed.
    Type: Grant
    Filed: March 29, 2004
    Date of Patent: November 21, 2006
    Assignee: NANYA Technology Corporation
    Inventors: Chang-Rong Wu, Yinan Chen, Tuz-Ching Tsai
  • Method and composite hard mask for forming deep trenches in a semiconductor substrate
    Publication number: 20050215061
    Abstract: A method and structure for forming deep trenches in a semiconductor substrate is provided. The method comprises: providing a semiconductor substrate; forming a pad oxide layer on the semiconductor substrate; forming a pad nitride layer on the pad oxide layer; forming a borophosphosilicate glass layer on the pad nitride layer; forming a borosilicate glass layer on the borophosphosilicate glass layer; and forming deep trenches through the borosilicate glass layer, through the borophosphosilicate glass layer, through the pad nitride, through the pad oxide, and into the semiconductor substrate. The borosilicate glass layer and the borophosphosilicate glass layer function as a composite hard mask in forming the deep trenches. With the borophosphosilicate glass layer, the composite hard mask can be easily removed by dry etch process using hydrogen fluoride vapor after the deep trenches have been formed.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 29, 2005
    Applicant: Nanya Technology Corporation
    Inventors: Chang-Rong Wu, Yinan Chen, Tuz-Ching Tsai