Abstract: A wire bondable plastic encapsulated semiconductor device (58) having no die supporting surface can be manufactured. In one embodiment, a semiconductor die (22) and a plurality of conductors (12) extending toward the periphery of the die are provided. The die is rigidly held in place on a workholder (60) with a vacuum (62) for the wire bonding process. Wire bonds (26) electrically connect the die to the conductors. The wire bonded die is then placed inside a mold cavity (64), and a resin encapsulated is transferred into the cavity under elevated temperature and pressure to form package body (70) around the die, the wire bonds and a portion of the conductors. Before the package body is formed, the die is supported solely by the the rigidity of the wire bonds since there is no die supporting surface connected to the conductors.

Abstract: Routing density of a wiring substrate (10) is increased by providing a nested plating bus (18) as a supplement to an external plating bus (16). A first group of conductive traces (14) is connected to the nested plating bus, while another group of traces is connected to the external plating bus. After the conductive elements are plated, the nested plating bus is removed by etching, milling, or stamping techniques. Use of a nested plating bus increases I/O count for a given substrate area and/or reduces the need to have routing on more than one layer of the substrate.

Abstract: Routing density of a wiring substrate (10) is increased by providing a nested plating bus (18) as a supplement to an external plating bus (16). A first group of conductive traces (14) is connected to the nested plating bus, while another group of traces is connected to the external plating bus. After the conductive elements are plated, the nested plating bus is removed by etching, milling, or stamping techniques. Use of a nested plating bus increases I/O count for a given substrate area and/or reduces the need to have routing on more than one layer of the substrate.