Abstract: A portable system is provided for foam injection. The system includes two or more tanks of foam-producing components; a pump associated with each of the two or more tanks; a length of modified conduit; a conduit interjector; and a wireline system. The conduit is pushable by the injector into cavities to be injected with foam and extractable therefrom. A method is further provided for foam injection at a remote location.

Abstract: A portable system is provided for foam injection. The system includes two or more tanks of foam-producing components; a pump associated with each of the two or more tanks; a length of modified conduit; a conduit interjector; and a wireline system. The conduit is pushable by the injector into cavities to be injected with foam and extractable therefrom. A method is further provided for foam injection at a remote location.

Abstract: Hermetically-sealed electrical circuit apparatus and methods for constructing such apparatus using one or more seal portions.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: An apparatus and method uses a first Faraday cage portion and a second Faraday cage portion to provide a Faraday cage enclosure surrounding at least one circuit device. For example, the first Faraday cage portion may include a first conductive portion of a Faraday cage enclosure surrounding the at least one circuit device, and a second Faraday cage portion may include a second conductive portion of the Faraday cage enclosure surrounding the at least one circuit device. Further, for example, the first Faraday cage portion may include a connection surface having one or more conductive contact portions terminating the first conductive portion of the Faraday cage enclosure the second Faraday cage portion may include a connection surface having one or more conductive contact portions terminating the second conductive portion of the Faraday cage enclosure. An electrical connection may be provided between the conductive contact portions of the first and second Faraday cage portions.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: Electrical circuit apparatus and methods including hermeticity testing structures for testing the hermeticity of the electrical circuit apparatus.

Abstract: An apparatus and method uses a first Faraday cage portion and a second Faraday cage portion to provide a Faraday cage enclosure surrounding at least one circuit device.

Abstract: Apparatus and methods to protect circuitry from moisture ingress, e.g., using a metallic structure as part of a moisture ingress barrier.

Abstract: Electrical circuit apparatus and methods including hermeticity testing structures for testing the hermeticity of the electrical circuit apparatus.

Abstract: Hermetically-sealed electrical circuit apparatus and methods for constructing such apparatus using one or more seal portions.

Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.

Abstract: Methods and apparatus are provided for manufacturing a medical device. An implantable medical device includes a semiconductor substrate, an epitaxial layer, and a power transistor. The epitaxial layer overlies the semiconductor substrate. The power transistor is formed in the epitaxial layer and includes a first electrode, a control electrode, and a second electrode. The power transistor has a voltage breakdown greater than 100 volts. The current flow of the power transistor is vertical through the epitaxial layer to the semiconductor substrate. A backside contact couples to the first electrode of the power transistor. A method of manufacturing a medical device includes a power transistor formed in an epitaxial layer overlying a semiconductor substrate. A deep trench is etched through the epitaxial layer exposing the semiconductor substrate. A first electrode contact region couples to an exposed area of the semiconductor substrate in the deep trench.