Patents by Inventor Tyng-Hao Hsu
Tyng-Hao Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7469057Abstract: A method and system is disclosed for inspecting defects on a wafer. After acquiring at least one digitized image of at least one portion of a wafer, at least one design database file corresponding to the portion of the wafer is converted into at least one inspection file. After setting one or more error detection thresholds, the digitized image and the inspection file are compared by an inspection tool for detecting defects with regard to the portion of the wafer based on the set error detection thresholds.Type: GrantFiled: February 18, 2004Date of Patent: December 23, 2008Assignee: Taiwan Semiconductor Manufacturing CorpInventors: Chang-Cheng Hung, Hung-Chang Hsieh, Hsen-Lin Wu, Tyng-Hao Hsu
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Patent number: 7162071Abstract: A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.Type: GrantFiled: December 20, 2002Date of Patent: January 9, 2007Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chang-Cheng Hung, Tyng-Hao Hsu, Chin-Hsiang Lin, Chuan-Yuan Lin, Shin-Ying Chen
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Patent number: 7035449Abstract: A back-end method for photomask making generally includes the steps of inspecting a photomask and repairing each defect on the photomask. The step of inspecting the photomask preferably comprises a defect finder mark implementation routine. In general, when inspecting the photomask for defects, the defect finder mark implementation routine deposits a defect finder mark on the photomask via a mark installer (not shown) included with a mask marking inspection system. Deposition of the defect finder mark includes establishing a location that is adjacent to the defect and establishing a size that is detectable by a mask repair device (not shown). By deposition on the photomask, the defect finder mark reliably facilitates location of the corresponding defect despite variations in image resolution and stage movement between the mask marking inspection system and the mask repair device.Type: GrantFiled: November 16, 2001Date of Patent: April 25, 2006Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Chang Cheng Hung, Chuan-Yuan Lin, Tyng-Hao Hsu, Shu-Chun Lin, Chin-Hsiang Lin
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Patent number: 6858353Abstract: An increased-contrast film for high-transmittance attenuated phase-shift masks (PSM's) is disclosed. A high-transmittance attenuated PSM includes a clear substrate, a shifter film selectively covering the clear substrate, and an increased-contrast film covering the shifter film to aid inspection of the PSM. The increased-contrast film may be removable, and may be photoresist. The increased-contrast film is preferably non-reactive to light used during the inspection of the PSM.Type: GrantFiled: July 17, 2002Date of Patent: February 22, 2005Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Chia-Yang Chang, Tyng-Hao Hsu, Chang-Cheng Hung, Chin-Hsiang Lin
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Publication number: 20040165761Abstract: A method and system is disclosed for inspecting defects on a wafer. After acquiring at least one digitized image of at least one portion of a wafer, at least one design database file corresponding to the portion of the wafer is converted into at least one inspection file. After setting one or more error detection thresholds, the digitized image and the inspection file are compared by an inspection tool for detecting defects with regard to the portion of the wafer based on the set error detection thresholds.Type: ApplicationFiled: February 18, 2004Publication date: August 26, 2004Inventors: Chang-Cheng Hung, Hung-Chang Hsieh, Hsen-Lin Wu, Tyng-Hao Hsu
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Publication number: 20040120569Abstract: A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.Type: ApplicationFiled: December 20, 2002Publication date: June 24, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chang-Cheng Hung, Tyng-Hao Hsu, Chin-Hsiang Lin, Chuan-Yuan Lin, Shin-Ying Chen
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Patent number: 6721939Abstract: Electron beam (e-beam) shot linearity monitoring is disclosed. A pattern is written that has a predetermined size and a predetermined form in a predetermined position on a substrate, such as a semiconductor wafer, a reticle, or a photomask. The pattern writing fixes the e-beam shot size, as located along one or more critical dimensions of the pattern. The critical dimensions are then measured, where their variations reflect the e-beam shot size linearity. Thereafter, deficiencies in the e-beam shot size linearity can be compensated for, to allow for properly produced semiconductor patterns.Type: GrantFiled: February 19, 2002Date of Patent: April 13, 2004Assignee: Taiwan Semiconductor Manufacturing Co., LtdInventors: Wen-Chuan Wang, Tyng-Hao Hsu, Chin-Hsiang Lin
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Publication number: 20040013947Abstract: An increased-contrast film for high-transmittance attenuated phase-shift masks (PSM's) is disclosed. A high-transmittance attenuated PSM includes a clear substrate, a shifter film selectively covering the clear substrate, and an increased-contrast film covering the shifter film to aid inspection of the PSM. The increased-contrast film may be removable, and may be photoresist. The increased-contrast film is preferably non-reactive to light used during the inspection of the PSM.Type: ApplicationFiled: July 17, 2002Publication date: January 22, 2004Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Yang Chang, Tyng-Hao Hsu, Chang-Cheng Hung, Chin-Hsiang Lin
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Publication number: 20030159125Abstract: Electron beam (e-beam) shot linearity monitoring is disclosed. A pattern is written that has a predetermined size and a predetermined form in a predetermined position on a substrate, such as a semiconductor wafer, a reticle, or a photomask. The pattern writing fixes the e-beam shot size, as located along one or more critical dimensions of the pattern. The critical dimensions are then measured, where their variations reflect the e-beam shot size linearity. Thereafter, deficiencies in the e-beam shot size linearity can be compensated for, to allow for properly produced semiconductor patterns.Type: ApplicationFiled: February 19, 2002Publication date: August 21, 2003Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wen-Chuan Wang, Tyng-Hao Hsu, Chin-Hsiang Lin
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Publication number: 20030095699Abstract: A back-end method for photomask making generally includes the steps of inspecting a photomask and repairing each defect on the photomask. The step of inspecting the photomask preferably comprises a defect finder mark implementation routine. In general, when inspecting the photomask for defects, the defect finder mark implementation routine deposits a defect finder mark on the photomask via a mark installer (not shown) included with a mask marking inspection system. Deposition of the defect finder mark includes establishing a location that is adjacent to the defect and establishing a size that is detectable by a mask repair device (not shown). By deposition on the photomask, the defect finder mark reliably facilitates location of the corresponding defect despite variations in image resolution and stage movement between the mask marking inspection system and the mask repair device.Type: ApplicationFiled: November 16, 2001Publication date: May 22, 2003Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Chang Cheng Hung, Chuan-Yuan Lin, Tyng-Hao Hsu, Shu-Chun Lin, Chin-Hsiang Lin
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Patent number: 6127075Abstract: A method for checking the accuracy of a measuring instrument used for overlay registration includes the steps of forming a plurality of sets of overlay marks on a calibration mask, each of the overlay marks consisting of an outer box and an inner box, the central point of the outer box being shifted by a predetermined amount relative to the cental point of the inner box. A photoresist layer is then coated atop a control wafer and exposed through the calibration mask. Subsequently, the control wafer is developed to transfer the pattern of the mask to the photoresist layer atop the control wafer. The degree of accuracy of the measuring instrument used for overlay registration can be checked and measured by first taking a deviation of a measured shift amount for each set, which is defined as a difference between the measured shift amount and a corresponding predetermined value, and then taking a mean value of these deviations for all sets.Type: GrantFiled: October 1, 1998Date of Patent: October 3, 2000Assignee: Mosel Vitelic IncorporatedInventor: Tyng-Hao Hsu