Patents by Inventor Tyrone Philip Stodart

Tyrone Philip Stodart has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Flash memory cell structure with improved channel punch-through characteristics
    Patent number: 6284603
    Abstract: A new method of fabricating a Flash EEPROM memory cell is achieved. Ions are optionally implanted into said semiconductor substrate to form threshold enhancement regions of the same type as the semiconductor substrate. A tunneling oxide is formed. A first conductive layer is deposited. An interpoly oxide layer is deposited. A second conductive layer is deposited. The second conductive layer, the interpoly oxide layer, the first conductive layer, and the tunneling oxide layer are patterned to form control gates and floating gates. Ions are implanted to form drain junctions. A mask protects the planned source junctions. The drain junctions are opposite type to the semiconductor substrate. Ions are implanted to form source junctions. A mask protects the drain junctions. The source junctions are opposite type to the semiconductor substrate. Ions are implanted to form channel stop junctions to complete the Flash EEPROM memory cells.
    Type: Grant
    Filed: July 12, 2000
    Date of Patent: September 4, 2001
    Assignee: Chartered Semiconductor Manufacturing Inc.
    Inventors: Chan Tze Ho Simon, Tyrone Philip Stodart, Sung Rae Kim, Yung-Tao Lin