Patents by Inventor Tysh-Bin Lin

Tysh-Bin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10804895
    Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Lin
  • Publication number: 20200228116
    Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Inventors: Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Lin
  • Publication number: 20190253051
    Abstract: Devices are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
    Type: Application
    Filed: April 24, 2019
    Publication date: August 15, 2019
    Inventors: Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Lin
  • Patent number: 10284195
    Abstract: Devices, systems, and methods are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
    Type: Grant
    Filed: June 28, 2018
    Date of Patent: May 7, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Lin
  • Publication number: 20180316346
    Abstract: Devices, systems, and methods are described herein for a low static current semiconductor device. A semiconductor device includes a power transistor and a driving circuit coupled to and configured to drive the power transistor. The driving circuit includes a first stage having an enhancement-mode high-electron-mobility transistor (HEMT) and a a second stage that is coupled between the first stage and the power transistor and that includes a pair of enhancement-mode HEMTs.
    Type: Application
    Filed: June 28, 2018
    Publication date: November 1, 2018
    Inventors: Chan-Hong Chern, Chu Fu Chen, Chun Lin Tsai, Mark Chen, King-Yuen Wong, Ming-Cheng Lin, Tysh-Bin Lin