Abstract: A display module including a first circuit board, a display panel and at least a die is disclosed. The display panel is disposed on the first circuit board and electrically connected to the first circuit board through a bonding wire. The die is disposed on the first circuit board and electrically connected to the first circuit board.

Abstract: A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is provided. The HV first type well is disposed inside the first type substrate. The second type well is disposed inside the first type substrate to separate the HV first type well from the first type substrate. The LV device well and the MV device well are separately disposed inside the HV first type well by the separation of the HV first type well. The triple operation voltage device assists in reducing the space between the LV device well and the MV device well and improving the integration of integrated circuits.

Abstract: A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is provided. The HV first type well is disposed inside the first type substrate. The second type well is disposed inside the first type substrate to separate the HV first type well from the first type substrate. The LV device well and the MV device well are separately disposed inside the HV first type well by the separation of the HV first type well. The triple operation voltage device assists in reducing the space between the LV device well and the MV device well and improving the integration of integrated circuits.

Abstract: The present invention provides a fingerprint sensor chip formed on a dielectric layer of a semiconductor wafer. The fingerprint sensor chip comprises a plurality of rectangular sensor areas arranged in a matrix format which are surrounded by conductors, a second dielectric layer covering the sensor areas and the conductors wherein the surface of the second dielectric layer positioned above each of the sensor areas is formed as a protruding rectangular platform with a shallow trench around the platform, a rectangular metal plate positioned on top of each of the rectangular platforms which is used as a sensor plate of the fingerprint sensor chip, and a protective layer positioned on the surface of the semiconductor wafer to cover and protect the underlying circuitry.

Abstract: The present invention provides a method of forming a metal plate on a semiconductor wafer. The semiconductor wafer comprises a first dielectric layer and two line-shaped conductors positioned on the first dielectric layer, and a recess is formed between the two conductors and above the surface of the first dielectric layer which comprises two corners. The method comprises forming a second dielectric layer uniformly on the two conductors and the recess, and forming a plurality of approximately rectangular metal plates on the second dielectric layer, then forming a passivation layer on the semiconductor wafer for protecting the inner circuitry. The surface of the passivation layer above the recess is higher than the surface of the passivation layer above the conductors, and the passivation layer formed above each metal plate has an even surface.

Abstract: An improved method for photoresist residue is described. The method is used for preventing a material layer from being damaged by the photoresist residue. A semiconductor substrate is provided. An insulating layer is formed over the substrate. The patterned material layer is formed on the insulating layer. A thin dielectric layer is formed on the insulating layer and the material layer to protect the material layer. A patterned photoresist layer is formed on the dielectric layer. The insulating layer is defined. The photoresist layer is removed.

Abstract: This invention provides a method of detecting a transparent quartz wafer in a semiconductor equipment used to perform a specific process over a silicon wafer and comprising a light source and a optic sensor. When the silicon wafer is moved into the equipment, it will block the light and the equipment is switched on to perform the specific process. The method is forming a thin film layer at the bottom side of the quartz wafer over which thin film layer can absorb at least portion of light transmitted from the light source. When the quartz wafer is moved into the equipment, the thin film layer can absorb portion light so as to make the optic sensor detect the quartz wafer and then the equipment will be switched on to perform the specific process.