Abstract: The invention relates to a method of processing a workpiece having a first surface, a second surface opposite the first surface, and a third surface extending between the first and second surfaces. The method comprises forming modified regions inside the workpiece so as to create openings in the workpiece. The openings extend to at least one of the first surface, the second surface and the third surface. The method further comprises, after forming the modified regions inside the workpiece, introducing a liquid medium into at least some of the openings and, after introducing the liquid medium into the at least some of the openings, applying an external stimulus to the liquid medium so as to increase the volume of the medium. Moreover, the invention relates to a workpiece processing system for performing this method.

Abstract: A substrate having a first surface with at least one division line and an opposite second surface is processed by attaching a protective sheeting to the first surface and applying a laser beam to the protective sheeting to form a plurality of alignment marks in the protective sheeting. The substrate has a backside layer on the second surface. A laser beam is applied to the substrate from the side of the first surface. The substrate is transparent to the laser beam and the focal point of the laser beam is located inside the substrate which is closer to the second surface than to the first surface, to form a plurality of alignment marks in the backside layer. Substrate material is removed along the division line from the side of the second surface. The alignment marks are used for aligning the substrate material removing means relative to the division line.

Abstract: The invention relates to a method of processing a workpiece having a first surface, a second surface opposite the first surface, and a third surface extending between the first and second surfaces. The method comprises forming modified regions inside the workpiece so as to create openings in the workpiece. The openings extend to at least one of the first surface, the second surface and the third surface. The method further comprises, after forming the modified regions inside the workpiece, introducing a liquid medium into at least some of the openings and, after introducing the liquid medium into the at least some of the openings, applying an external stimulus to the liquid medium so as to increase the volume of the medium. Moreover, the invention relates to a workpiece processing system for performing this method.

Abstract: A substrate having a first surface with at least one division line and an opposite second surface is processed by attaching a protective sheeting to the first surface and applying a laser beam to the protective sheeting to form a plurality of alignment marks in the protective sheeting. The substrate has a backside layer on the second surface. A laser beam is applied to the substrate from the side of the first surface. The substrate is transparent to the laser beam and the focal point of the laser beam is located inside the substrate which is closer to the second surface than to the first surface, to form a plurality of alignment marks in the backside layer. Substrate material is removed along the division line from the side of the second surface. The alignment marks are used for aligning the substrate material removing means relative to the division line.

Abstract: A light emitting semiconductor device according the invention includes an SOI substrate, a collector and an injector. The SOI substrate includes a carrier layer, a buried oxide layer on the carrier layer, and a doped silicon layer structure with a conductivity type. The doped silicon layer structure with the conductivity type includes at least two silicon- or silicon germanium layers arranged adjacent to one another, wherein a dislocation network is configured in their interface portions at which dislocation network a radiative charge carrier combination with a light energy is provided, which light energy is smaller than a band gap energy of the silicon- or silicon germanium layers. The collector is formed as a pn-junction in a portion between the dislocation network and a surface of the silicon layer structure that is oriented away from the carrier layer, and wherein the injector is configured as a metal insulator semiconductor diode.

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.

Abstract: A light-emitting semiconductor component comprising a substrate which has a first interface between a first and a second silicon layer, whose lattice structures which are considered as ideal are rotated relative to each other through a twist angle about a first axis perpendicular to the substrate surface and are tilted through a tilt angle about a second axis parallel to the substrate surface, in such a way that a dislocation network is present in the region of the interface, wherein the twist angle and the tilt angle are so selected that an electroluminescence spectrum of the semiconductor component has an absolute maximum of the emitted light intensity at either 1.3 micrometers light wavelength or 1.55 micrometers light wavelength.