Abstract: A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer.

Abstract: A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer.

Abstract: A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the lower antireflective coating layer; transferring a wiring pattern through the organic planarizing layer; transferring the wiring pattern through the lower antireflective coating layer; and transferring the wiring pattern through the dielectric layer, wherein unpatterned portions of the lower antireflective coating layer serve as an etch stop layer so as to prevent any bubble defects present in the organic planarizing layer from being transferred to the dielectric layer.

Abstract: An improved through-silicon via (TSV) is disclosed. A semiconductor substrate has a a back-end-of-line (BEOL) stack formed thereon. The BEOL stack and semiconductor substrate has a TSV cavity formed thereon. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.

Abstract: An improved through-silicon via (TSV) and method of fabrication are disclosed. A back-end-of-line (BEOL) stack is formed on a semiconductor substrate. A TSV cavity is formed in the BEOL stack and semiconductor substrate. A conformal protective layer is disposed on the interior surface of the TSV cavity, along the BEOL stack and partway into the semiconductor substrate. The conformal protective layer serves to protect the dielectric layers within the BEOL stack during subsequent processing, improving the integrated circuit quality and product yield.

Abstract: A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer.

Abstract: A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer.

Abstract: A method of forming an interconnect structure for a semiconductor device includes forming a lower antireflective coating layer over a dielectric layer; forming an organic planarizing layer on the lower antireflective coating layer; transferring a wiring pattern through the organic planarizing layer; transferring the wiring pattern through the lower antireflective coating layer; and transferring the wiring pattern through the dielectric layer, wherein unpatterned portions of the lower antireflective coating layer serve as an etch stop layer so as to prevent any bubble defects present in the organic planarizing layer from being transferred to the dielectric layer.

Abstract: A method of forming a metal interconnect structure includes forming a copper line within an interlevel dielectric (ILD) layer; directly doping a top surface of the copper line with a copper alloy material; and forming a dielectric layer over the ILD layer and the copper alloy material; wherein the copper alloy material serves an adhesion interface layer between the copper line and the dielectric layer.

Abstract: A test structure and method for monitoring process uniformity. Embodiments of the invention include test structures having a first metallization layer, a second metallization layer formed above the first metallization layer, a defect-generating region in a first metallization layer, a defect-dispersing region in the second metallization layer above the defect-generating region; and a defect-detecting region in the second metallization layer adjacent to the defect-dispersing region. The defect-generating region of the exemplary embodiment may have zero pattern density, uniform non-zero pattern density, or non-uniform non-zero pattern density. The defect-detecting region may include a test pattern such as, a comb-serpentine structure. Embodiments may include more than one defect-generating region, more than one defect-dispersing region, or more than one defect-detecting region.

Abstract: A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.

Abstract: A method of forming an interconnect structure in an inter-layer dielectric (ILD) material, the method include the steps of creating one or more via openings in the ILD material; forming a first liner covering at least one of the one or more via openings; creating one or more trench openings on top of at least one of the one or more via openings covered by the first liner; and forming a second liner covering the trenching openings and at least part of the first liner. An interconnect structure formed by the method is also provided.