Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1?a?2, b?1, c?1, and b+c?4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Technologies for validating operations of devices include a host computing device. The host computing device validates the functionality of a system that includes a gateway device that is communicatively coupled to at least one sensor device. The host computing device transmits validation instructions to the gateway device to perform at least one function with respect to the at least one sensor device that is communicatively coupled to the gateway device. The host computing device also receives test data from the gateway device after transmitting the validation instructions, analyzes the test data to determine whether the system passed at least one of a functional test and a regression test, profiles the test data at least by characterizing at least one sensor data packet included in the test data, and generates a report that indicates a status of the system, based on the analysis and the profile. Other embodiments are described.

Abstract: A vehicle system for a vehicle with an occupant is provided. The system includes a seat assembly; a sensor group associated with the seat assembly and configured to collect data about physical characteristics of the occupant of the seat assembly; and a control module coupled to the sensor group and configured to identify the occupant based on the collected data about the physical characteristics of the occupant.

Abstract: A vehicle system for a vehicle with an occupant is provided. The system includes a seat assembly; a sensor group associated with the seat assembly and configured to collect data about physical characteristics of the occupant of the seat assembly; and a control module coupled to the sensor group and configured to identify the occupant based on the collected data about the physical characteristics of the occupant.

Abstract: A check link assembly for positioning a vehicle closure has a selectively positionable detent feature. The check link assembly includes an elongated link having a distal end. At least one cover is attachable to the link in a first orientation and in a second orientation. The cover has a first end, a second end, and a contoured surface between the first end and the second end. At least one member is biased against the link and is configured to ride against the contoured surface of the cover. The contoured surface at least partially defines a detent feature that interferes with the biased member to increase resistance to relative movement of the link and the biased member, thereby establishing a stop position. The detent feature is further from the distal end of the link when the cover is in the first orientation than when the cover is in the second orientation.

Abstract: A check link assembly for positioning a vehicle closure has a selectively positionable detent feature. The check link assembly includes an elongated link having a distal end. At least one cover is attachable to the link in a first orientation and in a second orientation. The cover has a first end, a second end, and a contoured surface between the first end and the second end. At least one member is biased against the link and is configured to ride against the contoured surface of the cover. The contoured surface at least partially defines a detent feature that interferes with the biased member to increase resistance to relative movement of the link and the biased member, thereby establishing a stop position. The detent feature is further from the distal end of the link when the cover is in the first orientation than when the cover is in the second orientation.