Patents by Inventor Tze Sheong NEOH

Tze Sheong NEOH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMS structures and methods of forming MEMS structures
    Patent number: 11575081
    Abstract: A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: February 7, 2023
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
    Inventors: Bevita Kallupalathinkal Chandran, Jia Jie Xia, Tze Sheong Neoh
  • MEMS STRUCTURES AND METHODS OF FORMING MEMS STRUCTURES
    Publication number: 20210159387
    Abstract: A MEMS structure may include a substrate, a first metal layer arranged over the substrate, an aluminum nitride layer at least partially arranged over the first metal layer and a second metal layer including one or more patterns arranged over the aluminum nitride layer. The first metal layer may include an electrode area configured for external electrical connection and one or more isolated areas configured to be electrically isolated from the electrode area and further configured to be electrically isolated from external electrical connection. Each pattern of the second metal layer may be arranged to at least partially overlap with one of the isolated area(s) of the first metal layer.
    Type: Application
    Filed: November 26, 2019
    Publication date: May 27, 2021
    Inventors: Bevita KALLUPALATHINKAL CHANDRAN, Jia Jie XIA, Tze Sheong NEOH