Abstract: A design methodology which prevents functional failure caused by CDM ESD events. A transistor model is used to model the final states of cells, and a simulator is then used to identify invulnerable cells. Cells that are potential failure sites are then identified. The cells which have been identified as being potential victims are replaced by the previously-identified invulnerable cells that have the identical logic function. On the other hand, if a cell with identical function cannot be found, an invulnerable buffer cell (that will not effect logic function) can be inserted in front of the potential victim transistor as protection. By replacing all the potential victim cells with cells which have been determined to be invulnerable, the resulting design will be guaranteed to be CDM ESD tolerant.

Abstract: An ESD protection circuit for protecting a host circuit coupled to a signal pad from an ESD event occurring at the signal pad includes at least one MEMS switch which is electrically connected to the signal pad. The MEMS switch includes a first contact structure adapted for connection to the signal pad, and a second contact structure adapted for connection to a voltage supply source. The first and second contact structures are coupled together during the ESD event for shunting an ESD current from the signal pad to the voltage supply source. The first and second contact structures are electrically isolated from one another in the absence of the ESD event. At least one of the first and second contact structures includes a passivation layer for reducing contact adhesion between the first and second contact structures.

Abstract: A design methodology which prevents functional failure caused by CDM ESD events. A transistor model is used to model the final states of cells, and a simulator is then used to identify invulnerable cells. Cells that are potential failure sites are then identified. The cells which have been identified as being potential victims are replaced by the previously-identified invulnerable cells that have the identical logic function. On the other hand, if a cell with identical function cannot be found, an invulnerable buffer cell (that will not effect logic function) can be inserted in front of the potential victim transistor as protection. By replacing all the potential victim cells with cells which have been determined to be invulnerable, the resulting design will be guaranteed to be CDM ESD tolerant.

Abstract: An ESD protection circuit for protecting a host circuit coupled to a signal pad from an ESD event occurring at the signal pad includes at least one MEMS switch which is electrically connected to the signal pad. The MEMS switch includes a first contact structure adapted for connection to the signal pad, and a second contact structure adapted for connection to a voltage supply source. The first and second contact structures are coupled together during the ESD event for shunting an ESD current from the signal pad to the voltage supply source. The first and second contact structures are electrically isolated from one another in the absence of the ESD event. At least one of the first and second contact structures includes a passivation layer for reducing contact adhesion between the first and second contact structures.