Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate. A first precursor and a second precursor are combined. The first precursor is an organometallic having a formula: MaRbXc, where M is one or more of Sn, Bi, Sb, In, and Te, R is one or more of a C7-C11 aralkyl group, a C3-C10 cycloalkyl group, a C2-C10 alkoxy group, and a C2-C10 alkylamino group, X is one or more of a halogen, a sulfonate group, and an alkylamino group, and 1?a?2, b?1, c?1, and b+c?4, and the second precursor is one or more of water, an amine, a borane, and a phosphine. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer.

Abstract: A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion embedded in the isolation layer, and a gate structure over top and sidewall surfaces of the semiconductor fin and the dielectric fin. The semiconductor fin has a first sidewall and a second sidewall facing away from the first sidewall. The isolation layer includes a first portion disposed on the first sidewall of the semiconductor fin and a second portion disposed on the second sidewall of the semiconductor fin. A top portion of the dielectric fin includes an air pocket with a top opening sealed by the gate structure.

Abstract: A method includes forming a dielectric layer over a substrate; forming a patterned amorphous silicon layer over a dielectric layer; depositing a first spacer layer over the patterned amorphous silicon layer; depositing a second spacer layer over the first spacer layer; forming a photoresist having an opening over the substrate; depositing a hard mask layer in the opening of the photoresist; after depositing the hard mask layer in the opening of the photoresist, removing the photoresist; and performing an etching process to etch the dielectric layer by using the patterned amorphous silicon layer, the first spacer layer, the second spacer layer, and the hard mask layer as an etch mask, in which the etching process etches the second spacer layer at a slower etch rate than etching the first spacer layer.

Abstract: A catheter, including a catheter body and a connector, can be adapted to a syringe for nasal flushing treatment. The catheter body is made of a soft material and has a flat closed distal end, a transitional segment having a flat closed segment and a lumen-containing oval segment, a circular normal segment and an open end on the opposite side of the flat closed distal end as well as multiple side-holes disposed near the closed end so that the catheter can be operated by patient to insert into a slit space of nasal cavity smaller than the diameter of the circular normal segment.

Abstract: A collapsible nasal ejecting catheter, made of thermoplastic elastomer or other soft and elastic material, can be operated by the patients to insert into their nasal cavity and nasopharynx. The catheter includes a catheter body and a connector. The catheter has a flat closed distal end, a transitional segment starting from the closed end to a circular appearance, a normal segment having a circular appearance, and an open end on the opposite side of the flat closed end. There are multiple side-holes near the closed end. This catheter, when adapted to a connector and further connected to a syringe, can eject multiple strong thin spouts within the nasal cavity and nasopharynx for cleansing mucus and crust. The maximum width of the transitional segment is not less than 1 mm, and the minimum wall thickness of the catheter is not larger than 0.45 mm.

Abstract: A nasal flushing catheter, made of silicone latex, thermoplastic elastomer or other soft and elastic material, can be operated by the patients. The catheter has a closed end and an open end on the opposite side. There are multiple side-holes near the closed end. This catheter, when adapted to a connector and further connected to a syringe, can eject multiple strong thin spouts within the nasal cavity and nasopharynx for cleansing mucus and crust. The catheter may contain at least one stylet to improve its controllability. By a given injection rate of 10 cc/sec using a syringe, the average vertical height of spouts can be predicted by the total area of side-holes, the catheter is therefore classified as following: 1. a low pressure catheter, having 3.367 mm2˜4.123 mm2 of total areas of side-holes to eject 30 to 45 cm spouts; 2. a medium pressure catheter, having 2.381 mm2˜3.367 mm2 of total area of side-holes to eject 45 to 90 cm spouts and 3. a high pressure catheter, having less than 2.

Abstract: A nasal ejecting catheter for home remedy of nasal irrigation treatment comprises a catheter unit and a connecting unit. The catheter unit comprises an open end, a closed end on the opposite side and a plurality of apertures formed near the closed end. The connection unit comprises a connection portion for connecting the open end of the catheter and an assembling portion for connecting an injection unit. The catheter body is made of silicone, latex, thermoplastic elastomer or other soft material to be operated by the patient. The total area of apertures is smaller than the cross section area of inner lumen of the catheter in order to eject substantially even strength multiple thin spouts.