Abstract: The present disclosure describes a method includes forming a fin structure including a fin bottom portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer and a second semiconductor layer, in which the first semiconductor layer includes germanium. The method further includes etching the fin structure to form an opening, delivering a primary etchant and a germanium-containing gas to the fin structure through the opening, and etching a portion of the second semiconductor layer in the opening with the primary etchant and the germanium-containing gas.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

Abstract: A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.

Abstract: A method for manufacturing a semiconductor structure includes: forming a semiconductor device on a main region of the device substrate, the device substrate having a peripheral region surrounding the main region; forming a first filling layer on the peripheral region of the device substrate; forming a second filling layer over the first filling layer and the semiconductor device after forming the first filling layer, the second filling layer having a polishing rate different from that of the first filling layer; performing a planarization process over the second filling layer to remove a portion of the second filling layer so that a remaining portion of the second filling layer has a planarized surface opposite to the device substrate; and bonding the device substrate to a carrier substrate through the first filling layer and the remaining portion of the second filling layer.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, an interlayer dielectric (ILD), and a conductive layer. The ILD is disposed on the substrate. The conductive layer is disposed on the substrate and spaced apart from the ILD by an air gap. The ILD is tapered toward the substrate.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask.

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

Abstract: A method includes forming a fin structure over a substrate, wherein the fin structure comprises first semiconductor layers and second semiconductor layers alternately stacked over a substrate; forming a dummy gate structure over the fin structure; removing a portion of the fin structure uncovered by the dummy gate structure; performing a selective etching process to laterally recess the first semiconductor layers, including injecting a hydrogen-containing gas from a first gas source of a processing tool to the first semiconductor layers and the second semiconductor layers; and injecting an F2 gas from a second gas source of the processing tool to the first semiconductor layers and the second semiconductor layers; forming inner spacers on opposite end surfaces of the laterally recessed first semiconductor layers of the fin structure; and replacing the dummy gate structure and the first semiconductor layers with a metal gate structure.

Abstract: A catheter, including a catheter body and a connector, can be adapted to a syringe for nasal flushing treatment. The catheter body is made of a soft material and has a flat closed distal end, a transitional segment having a flat closed segment and a lumen-containing oval segment, a circular normal segment and an open end on the opposite side of the flat closed distal end as well as multiple side-holes disposed near the closed end so that the catheter can be operated by patient to insert into a slit space of nasal cavity smaller than the diameter of the circular normal segment.

Abstract: A collapsible nasal ejecting catheter, made of thermoplastic elastomer or other soft and elastic material, can be operated by the patients to insert into their nasal cavity and nasopharynx. The catheter includes a catheter body and a connector. The catheter has a flat closed distal end, a transitional segment starting from the closed end to a circular appearance, a normal segment having a circular appearance, and an open end on the opposite side of the flat closed end. There are multiple side-holes near the closed end. This catheter, when adapted to a connector and further connected to a syringe, can eject multiple strong thin spouts within the nasal cavity and nasopharynx for cleansing mucus and crust. The maximum width of the transitional segment is not less than 1 mm, and the minimum wall thickness of the catheter is not larger than 0.45 mm.

Abstract: A nasal flushing catheter, made of silicone latex, thermoplastic elastomer or other soft and elastic material, can be operated by the patients. The catheter has a closed end and an open end on the opposite side. There are multiple side-holes near the closed end. This catheter, when adapted to a connector and further connected to a syringe, can eject multiple strong thin spouts within the nasal cavity and nasopharynx for cleansing mucus and crust. The catheter may contain at least one stylet to improve its controllability. By a given injection rate of 10 cc/sec using a syringe, the average vertical height of spouts can be predicted by the total area of side-holes, the catheter is therefore classified as following: 1. a low pressure catheter, having 3.367 mm2˜4.123 mm2 of total areas of side-holes to eject 30 to 45 cm spouts; 2. a medium pressure catheter, having 2.381 mm2˜3.367 mm2 of total area of side-holes to eject 45 to 90 cm spouts and 3. a high pressure catheter, having less than 2.

Abstract: A nasal ejecting catheter for home remedy of nasal irrigation treatment comprises a catheter unit and a connecting unit. The catheter unit comprises an open end, a closed end on the opposite side and a plurality of apertures formed near the closed end. The connection unit comprises a connection portion for connecting the open end of the catheter and an assembling portion for connecting an injection unit. The catheter body is made of silicone, latex, thermoplastic elastomer or other soft material to be operated by the patient. The total area of apertures is smaller than the cross section area of inner lumen of the catheter in order to eject substantially even strength multiple thin spouts.