Patents by Inventor Tzer-Jing Chen

Tzer-Jing Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SiC/Si heterostructure semiconductor switch and fabrication thereof
    Patent number: 6271544
    Abstract: This invention is a novel silicon carbide and silicon (SiC/Si) heterostructure N-shaped negative-differential-resistance semiconductor switch having low power dissipation and large on/off current ratio. The structure of the semiconductor switch includes Al electrode/p-type single crystal silicon carbide layer/graded-composition layer/n-type single crystal silicon substrate/Al electrode (Al/p-SiC/GCL/n-Si/Al), wherein the graded-composition layer is a buffer layer between the p-SiC and n-Si layers.
    Type: Grant
    Filed: July 21, 1998
    Date of Patent: August 7, 2001
    Assignee: National Science Council
    Inventors: Yean-Kuen Fang, Kuen-Hsien Wu, Tzer-Jing Chen