Abstract: Provided is a dehumidification system including an air directing device and an adsorbent hollow fiber module. The air directing device is used for conveying air. The adsorbent hollow fiber module can adsorb the moisture in the air as the air passes through the adsorbent hollow fiber module. The adsorbent hollow fiber module includes at least one adsorbent hollow fiber. The adsorbent hollow fiber has a tubular body having a first end and a second end and a channel disposed in the tubular body and extending from the first end to the second end.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: Provided is a dehumidification system including an air directing device and an adsorbent hollow fiber module. The air directing device is used for conveying air. The adsorbent hollow fiber module can adsorb the moisture in the air as the air passes through the adsorbent hollow fiber module. The adsorbent hollow fiber module includes at least one adsorbent hollow fiber. The adsorbent hollow fiber has a tubular body having a first end and a second end and a channel disposed in the tubular body and extending from the first end to the second end.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched.

Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

Abstract: An optical passivation film includes Tii-xAlxOy:Z, where Z represents a halogen, x is from 0.05 to 0.95, and y is greater than 0. A method for manufacturing the optical passivation film includes preparing a spray solution including an aluminium oxide precursor, a titanium oxide precursor, a halogen solution and a solvent. A substrate is disposed on a heating device to heat the substrate. The spray solution is sprayed on the substrate to form the optical passivation film. A solar cell having the optical passivation film is also provided.

Abstract: A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEm and the coefficient of thermal expansion of the planar buffer layer CTEp satisfy the following mathematical relationship: |CTEm?CTEp|?3×10?6/° C.

Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device for disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

Abstract: A ceramic powder composition and an optoelectronic device substrate utilizing the ceramic powder composition are disclosed. The optoelectronic device substrate is formed by sintering a ceramic powder composition including 4 to 97 wt % (weight percent) of zircon, 0 to 60 wt % of silicon dioxide, and 0 to 80 wt % of alumina, wherein the sintered ceramic substrate includes first and second crystalline phases, the first crystalline phase is zircon, and the second crystalline phase is at least one of or a combination of alumina, silicon dioxide, and zirconia crystalline phases, furthermore, the second crystalline phase can also includes a mullite crystalline phase.

Abstract: A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEm and the coefficient of thermal expansion of the planar buffer layer CTEp satisfy the following mathematical relationship: |CTEm?CTEp|?3×10?6/° C.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a polycrystal substrate, a first single crystal layer formed thereon and a second single crystal layer formed on the first single crystal layer. A variation of coefficients of thermal expansion (CTE) between the first single crystal layer and the polycrystal substrate is less than 25%. There is no lattice mismatch between the first single crystal layer and the polycrystal substrate.

Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.

Abstract: The specification discloses a material with a surface nanometer functional structure and the method of manufacturing the same. Using the properties of supercritical fluids, a nanometer structure is formed on the surface of a substrate, resulting in a material with a surface nanometer functional structure. The supercritical fluid carries the precursor of functional materials. Once they reach a reaction balance with the substrate in a high-pressure container, the pressure is released at an appropriate speed. The carbon dioxide supercritical fluid undergoes a vaporization reaction, distributing and adhering the precursors on the substrate to form the surface nanometer functional structure. Utilizing the VLS nanowire growth method, one-dimensional and two-dimensional compound nanometer functional wire structure can be produced.