Patents by Inventor Tzo Hung Luo
Tzo Hung Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10679859Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.Type: GrantFiled: December 14, 2018Date of Patent: June 9, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Liang Cheng, Yu-Lin Liu, Ming-Hsien Lin, Tzo-Hung Luo
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Publication number: 20190148153Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.Type: ApplicationFiled: December 14, 2018Publication date: May 16, 2019Inventors: Chung-Liang Cheng, Yu-Lin Liu, Ming-Hsien Lin, Tzo-Hung Luo
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Patent number: 10170322Abstract: Interconnect structures and corresponding techniques for forming the interconnect structures are disclosed herein. An exemplary method includes forming a contact opening in a dielectric layer. The contact opening has sidewalls defined by the dielectric layer and a bottom defined by a conductive feature. An ALD-like nitrogen-containing plasma pre-treatment process is performed on the sidewalls (and, in some implementations, the bottom) of the contact opening. An ALD process is performed to form a titanium-and-nitrogen containing barrier layer over the sidewalls and the bottom of the contact opening. A cobalt-containing bulk layer is then formed over the titanium-and-nitrogen-containing barrier layer. A cycle of the ALD-like nitrogen-containing plasma pre-treatment process can include a nitrogen-containing plasma pulse phase and a purge phase. A cycle of the ALD process can include a titanium-containing pulse phase, a first purge phase, a nitrogen-containing plasma pulse phase, and a second purge phase.Type: GrantFiled: November 16, 2017Date of Patent: January 1, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Liang Cheng, Yu-Lin Liu, Ming-Hsien Lin, Tzo-Hung Luo
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Patent number: 9748290Abstract: Embodiments of mechanisms for forming an image sensor device structure are provided. The image sensor device structure includes a substrate and a transfer transistor formed on the substrate. The image sensor device structure also includes a floating node formed in the substrate and a photosensitive element formed in the substrate. The transfer transistor is formed between the floating node and the photosensitive element, and the photosensitive element includes a first doping region with a lateral doping gradient.Type: GrantFiled: February 3, 2014Date of Patent: August 29, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yueh-Chuan Lee, Tzo-Hung Luo
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Patent number: 9653497Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.Type: GrantFiled: September 9, 2015Date of Patent: May 16, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzo-Hung Luo, Chin-Hung Chiang
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Publication number: 20150380446Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.Type: ApplicationFiled: September 9, 2015Publication date: December 31, 2015Inventors: Tzo-Hung LUO, Chin-Hung CHIANG
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Patent number: 9171873Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.Type: GrantFiled: January 16, 2014Date of Patent: October 27, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tzo-Hung Luo, Chin-Hung Chiang
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Publication number: 20150221689Abstract: Embodiments of mechanisms for forming an image sensor device structure are provided. The image sensor device structure includes a substrate and a transfer transistor formed on the substrate. The image sensor device structure also includes a floating node formed in the substrate and a photosensitive element formed in the substrate. The transfer transistor is formed between the floating node and the photosensitive element, and the photosensitive element includes a first doping region with a lateral doping gradient.Type: ApplicationFiled: February 3, 2014Publication date: August 6, 2015Applicant: Taiwan Semiconductor Manufacturing Co., LtdInventors: Yueh-Chuan LEE, Tzo-Hung LUO
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Publication number: 20150200215Abstract: A manufacturing method of a sensing integrated circuit including the following acts. A plurality of transistors are formed. At least one dielectric layer is formed on or above the transistors. A plurality of connecting structures are formed in the dielectric layer. The connecting structures are respectively and electrically connected to the transistors. A plurality of separated conductive wells are respectively formed in electrical contact with the connecting structures.Type: ApplicationFiled: January 16, 2014Publication date: July 16, 2015Applicant: Taiwan Semiconductor Manufacturing CO., LTD.Inventors: Tzo-Hung Luo, Chin-Hung Chiang
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Patent number: 7378744Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: GrantFiled: May 22, 2006Date of Patent: May 27, 2008Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
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Patent number: 7358612Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: GrantFiled: May 22, 2006Date of Patent: April 15, 2008Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
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Publication number: 20070010080Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: ApplicationFiled: May 22, 2006Publication date: January 11, 2007Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
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Publication number: 20060216916Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: ApplicationFiled: May 22, 2006Publication date: September 28, 2006Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jian-Shin Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang
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Patent number: 7067409Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: GrantFiled: May 10, 2004Date of Patent: June 27, 2006Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jian Shin Tsai, Yu Hua Chou, Tzo Hung Luo, Chi Chan Tseng, Wei Zhang, Jong Chen Yang
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Publication number: 20050250320Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.Type: ApplicationFiled: May 10, 2004Publication date: November 10, 2005Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.Inventors: Jian Tsai, Yu-Hua Chou, Tzo-Hung Luo, Chi-Chan Tseng, Wei Zhang, Jong-Chen Yang