Abstract: A method of optical proximity correction for a photolithographic progress in manufacturing semiconductor devices is disclosed. The method includes providing an illumination source in an optical system, dividing the illumination source into a number of segments in the form of concentric rings, and assigning a first intensity level to a first ring of a first radius and assigning a second intensity level to a second ring of a second radius, wherein the first intensity level is smaller than or equal to the second intensity level when the first radius is smaller than or equal to the second radius.

Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer. The material layer has a first hard mask layer and a second hard mask layer successively formed thereon. Then, the second hard mask layer is patterned to form a plurality of openings therein. A patterned photoresist layer is formed to cover the second hard mask layer and the patterned photoresist layer exposes a portion of the openings. The first hard mask layer with the patterned photoresist layer and the patterned second hard mask layer together as a mask. Then, the patterned photoresist layer and the patterned second hard mask layer are removed. The material layer is patterned with the patterned first hard mask layer as a mask.

Abstract: A method of defining patterns in a small pitch is described. A substrate having a target layer thereon is provided, and two laterally separate reflective structures with two opposite sidewalls are formed over the target layer. A photoresist layer is formed over the target layer between the two opposite sidewalls. An exposure step is performed allowing light to be reflected by the two opposite sidewalls in the lateral direction, wherein the two opposite sidewalls are spaced by a distance to cause the reflected light to produce a periodical intensity distribution in the photoresist layer in the lateral direction.

Abstract: A method and system to form openings comprises an exposure apparatus and a mask to selectively expose a semiconductor substrate to a radiation source to transfer assist feature patterns and primary feature patterns to a photosensitive layer of the substrate. A heating apparatus eliminates the assist features by heating the substrate and shrinking the primary features. The patterns on the photosensitive layer are transferred to a layer under the photosensitive layer by an etching process.

Abstract: An exemplary lithography process may include: receiving a substrate having a photo-sensitive layer; providing a light source capable of causing an exposure of a portion of the photo-sensitive layer; and providing a mask capable of defining at least one pattern that is to be transferred to the photo-sensitive layer. Specifically, the substrate has a top surface on or over the photo-sensitive layer, and the mask receives an electromagnetic wave from the light source at a first surface of the mask and generates a plurality of electromagnetic components from a second surface of the mask. The lithography process may also include: providing a lens, which provides a flat surface at a bottom surface of the lens, for transferring the pattern to the photo-sensitive layer; and adjusting the distance between the flat surface of the lens and the top surface of the substrate to control the number and amount of the electro-magnetic components projected onto the photo-sensitive layer.

Abstract: A method of optical proximity correction for a photolithographic progress in manufacturing semiconductor devices is disclosed. The method includes providing an illumination source in an optical system, dividing the illumination source into a number of segments in the form of concentric rings, and assigning a first intensity level to a first ring of a first radius and assigning a second intensity level to a second ring of a second radius, wherein the first intensity level is smaller than or equal to the second intensity level when the first radius is smaller than or equal to the second radius.

Abstract: A method for detecting the presence of side lobes in a full chip layout having a main pattern designed on a mask includes surrounding the main pattern with a pattern of polygons or circles. A lithography rule check is performed and uses the pattern of polygons or circles to search the main pattern for side lobes. The location of a side lobe is preferably marked with an error flag.

Abstract: The invention is directed to a pattern on a mask. The pattern comprises a main dense pattern, a first anti-aberration pattern and a second anti-aberration pattern. The main dense pattern comprises a first outmost sub-pattern and a second outmost sub-pattern, wherein the first outmost sub-pattern and the second pattern are not adjacent to each other. The first anti-aberration pattern is located adjacent to the first outmost sub-pattern with a first distance. The second anti-aberration pattern is located adjacent to the second outmost sub-pattern with a second distance, wherein the first distance and the second distance are different from each other.

Abstract: The invention is directed to a method for patterning a material layer. The method comprises steps of providing a material layer. The material layer has a first hard mask layer and a second hard mask layer successively formed thereon. Then, the second hard mask layer is patterned to form a plurality of openings therein. A patterned photoresist layer is formed to cover the second hard mask layer and the patterned photoresist layer exposes a portion of the openings. The first hard mask layer with the patterned photoresist layer and the patterned second hard mask layer together as a mask. Then, the patterned photoresist layer and the patterned second hard mask layer are removed. The material layer is patterned with the patterned first hard mask layer as a mask.

Abstract: A method and system to form openings comprises an exposure apparatus and a mask to selectively expose a semiconductor substrate to a radiation source to transfer assist feature patterns and primary feature patterns to a photosensitive layer of the substrate. A heating apparatus eliminates the assist features by heating the substrate and shrinking the primary features. The patterns on the photosensitive layer are transferred to a layer under the photosensitive layer by an etching process.

Abstract: A mask of a lithographic process, a method of manufacturing the mask and a lithographic process by using the mask are provided. The mask includes a substrate, a first polarization layer and a second polarization layer is provided. The first polarization layer for allowing a transmission of a first polarization direction of light and avoiding a transmission of a second polarization direction of light. The second polarization layer for avoiding a transmission of the first polarization direction of light, wherein the second polarization layer is patterned with a predetermined pattern.

Abstract: A method of defining patterns in a small pitch is described. A substrate having a target layer thereon is provided, and two laterally separate reflective structures with two opposite sidewalls are formed over the target layer. A photoresist layer is formed over the target layer between the two opposite sidewalls. An exposure step is performed allowing light to be reflected by the two opposite sidewalls in the lateral direction, wherein the two opposite sidewalls are spaced by a distance to cause the reflected light to produce a periodical intensity distribution in the photoresist layer in the lateral direction.

Abstract: A method for detecting the presence of side lobes in a full chip layout having a main pattern designed on a mask includes surrounding the main pattern with a pattern of polygons or circles. A lithography rule check is performed and uses the pattern of polygons or circles to search the main pattern for side lobes. The location of a side lobe is preferably marked with an error flag.

Abstract: An exemplary lithography process may include: receiving a substrate having a photo-sensitive layer; providing a light source capable of causing an exposure of a portion of the photo-sensitive layer; and providing a mask capable of defining at least one pattern that is to be transferred to the photo-sensitive layer. Specifically, the substrate has a top surface on or over the photo-sensitive layer, and the mask receives an electromagnetic wave from the light source at a first surface of the mask and generates a plurality of electromagnetic components from a second surface of the mask. The lithography process may also include: providing a lens, which provides a flat surface at a bottom surface of the lens, for transferring the pattern to the photo-sensitive layer; and adjusting the distance between the flat surface of the lens and the top surface of the substrate to control the number and amount of the electromagnetic components projected onto the photo-sensitive layer.

Abstract: The invention is directed to a pattern on a mask. The pattern comprises a main dense pattern, a first anti-aberration pattern and a second anti-aberration pattern. The main dense pattern comprises a first outmost sub-pattern and a second outmost sub-pattern, wherein the first outmost sub-pattern and the second pattern are not adjacent to each other. The first anti-aberration pattern is located adjacent to the first outmost sub-pattern with a first distance. The second anti-aberration pattern is located adjacent to the second outmost sub-pattern with a second distance, wherein the first distance and the second distance are different from each other.

Abstract: A mask of a lithographic process, a method of manufacturing the mask and a lithographic process by using the mask are provided. The mask includes a substrate, a first polarization layer and a second polarization layer is provided. The first polarization layer for allowing a transmission of a first polarization direction of light and avoiding a transmission of a second polarization direction of light. The second polarization layer for avoiding a transmission of the first polarization direction of light, wherein the second polarization layer is patterned with a predetermined pattern.