Patents by Inventor Tzong-Lin Jay Shieh

Tzong-Lin Jay Shieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE
    Publication number: 20220384582
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • Semiconductor device with ferroelectric aluminum nitride
    Patent number: 11502176
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Grant
    Filed: November 3, 2020
    Date of Patent: November 15, 2022
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE
    Publication number: 20210074817
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Application
    Filed: November 3, 2020
    Publication date: March 11, 2021
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • Semiconductor device with ferroelectric aluminum nitride
    Patent number: 10847623
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: November 24, 2020
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • SEMICONDUCTOR DEVICE WITH FERROELECTRIC ALUMINUM NITRIDE
    Publication number: 20200098871
    Abstract: Techniques in accordance with embodiments described herein are directed to semiconductor devices including a layer of aluminum nitride AlN or aluminum gallium nitride AlGaN as a ferroelectric layer and a method of making a thin film of AlN/AlGaN that possesses ferroelectric properties. In a ferroelectric transistor, a thin film of AlN/AlGaN that exhibits ferroelectric properties is formed between a gate electrode and a second semiconductor layer, e.g., of GaN.
    Type: Application
    Filed: December 28, 2018
    Publication date: March 26, 2020
    Inventors: Miin-Jang Chen, Tzong-Lin Jay Shieh, Bo-Ting Lin
  • Method for changing ultrasound wave frequency by using the acoustic matching layer
    Patent number: 8410664
    Abstract: The method of changing ultrasound wave frequency by using the acoustic matching layer presents a replaceable acoustic matching layer to offer an effective means of filtering the original broadband frequency of an ultrasonic transducer into certain composite discontinuous frequencies. The filtering effect could be improved by connecting the electrodes of the acoustic matching layer when it is made of a poled piezoelectric material. This method may provide novel applications for commercial ultrasonic transducers.
    Type: Grant
    Filed: April 29, 2010
    Date of Patent: April 2, 2013
    Assignee: National Taiwan University
    Inventors: Tzong-Lin Jay Shieh, Wen-Shiang Chen, Chung-Ting Ko, Chuin-Shan Chen
  • SOLAR ENERGY COLLECTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20110100452
    Abstract: A solar energy collector and a method for manufacturing the same. The solar energy collector has a solar chip, conductive wires connected to the solar chip, and a securing line that secures the solar chip and the conductive wires. The solar energy collector is rollable, foldable and expandable.
    Type: Application
    Filed: September 21, 2010
    Publication date: May 5, 2011
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Jia-Yush Yen, Chuin-Shan Chen, Tzong-Lin Jay Shieh, Chia-Ling Wu, Hui-Ping Chen, Chen Jen Wel, Nien-Chen Lin, Yung-Bin Lin
  • Method for changing ultrasound wave frequency by using the acoustic matching layer
    Publication number: 20100283355
    Abstract: The method of changing ultrasound wave frequency by using the acoustic matching layer presents a replaceable acoustic matching layer to offer an effective means of filtering the original broadband frequency of an ultrasonic transducer into certain composite discontinuous frequencies. The filtering effect could be improved by connecting the electrodes of the acoustic matching layer when it is made of a poled piezoelectric material. This method may provide novel applications for commercial ultrasonic transducers.
    Type: Application
    Filed: April 29, 2010
    Publication date: November 11, 2010
    Applicant: National Taiwan University
    Inventors: Tzong-Lin Jay Shieh, Wen-Shiang Chen, Chung-Ting Ko, Chuin-Shan Chen