Abstract: A scan flip-flop circuit includes first and second I/O nodes, a flip-flop circuit, a selection circuit configured to receive a scan direction signal and including input terminals coupled to the first and second I/O nodes and an output terminal coupled to an input terminal of the flip-flop circuit, and first and second drivers configured to receive the scan direction signal and a scan enable signal, each including an input terminal coupled to an output terminal of the flip-flop circuit and an output terminal coupled to a respective first or second input terminal of the selection circuit. Responsive to the scan direction and scan enable signals, one of the first driver is configured to output a first signal responsive to a second signal received at the second input terminal or the second driver is configured to output a third signal responsive to a fourth signal received at the first input terminal.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming a fin structure over a semiconductor material; forming a sacrificial layer over the semiconductor material; removing a portion of the fin structure and an overlying portion of the sacrificial layer located over the portion of the fin structure to form a trench; forming an insulation structure in the trench, wherein an adjacent portion of the sacrificial layer is adjacent an end wall of the insulation structure; removing the adjacent portion to form a cavity partially defined by the end wall; lining the cavity with a liner, wherein an end portion of the liner is located on the end wall of the insulation structure; filling the cavity with a fill material; removing the end portion of the liner to form an opening; and forming an end isolation structure in the opening.

Abstract: This invention discloses a hybrid phase-shift mask (PSM) having multi-film structure that from bottom to top is transparent film, attenuate film, and opaque film. By using several exposure and develop processes as well as controlling the etching selectivity, the multi-film structure can be patterned to form the chrome-less PSM and alternate PSM features within its cell area, and form halftone PSM features within its periphery area.

Abstract: This invention discloses a hybrid phase-shift mask (PSM) having multi-film structure that from bottom to top is transparent film, attenuate film, and opaque film. By using several exposure and develop processes as well as controlling the etching selectivity, the multi-film structure can be patterned to form the chrome-less PSM and alternate PSM features within its cell area, and form halftone PSM features within its periphery area.