Abstract: A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.

Abstract: A box with two tearing stages for receiving an element comprises a box having a receiving tank and a base plate extending from the receiving tank; a top end of the base plate having a hanging hole for hanging the box; the receiving tank serving to receive an object for packaging; one lateral side of the base plate formed with a tear-able portion which has a small area; a sealing film adhered upon the receiving tank and the base plate and also sealing the tearable portion; the sealing film being formed with two banks of tearing lines; thus, when the tearable portion is torn, a part of the sealing film confined by the two banks of the tearing lines is also torn away; and the sealing film being formed with a tearable area upon the receiving tank.