Abstract: A rope pulling exercise apparatus with variable resistance has a main supporting frame, a rotary cylinder assembly pivotally mounted on the main supporting frame, a rotary wheel pivotally mounted on the main supporting frame, a driving device and a resistance generating device. The rotary cylinder assembly has a pull-rope wrapped around a rotary cylinder. The driving device has a driving wheel coaxially mounted on the rotary cylinder, a driven wheel coaxially mounted on the rotary wheel, aligning with the driving wheel and being smaller than the driving wheel in radius, and a transmission belt mounted around the driving wheel and the driven wheel. The resistance generating device selectively resists rotation of the rotary wheel. The rope pulling exercise apparatus provides a user one more option on choosing fitness equipments, and increases the user's desire on exercising.

Abstract: Some embodiments relate to a sense amplifier output buffer configured to buffer an output of a sense amplifier. The sense amplifier output buffer includes a first pull-up element having a source coupled to a first DC supply terminal and having a drain coupled to an output terminal of the sense amplifier output buffer. A first pull-down element is in series with the first pull-up element and has a source coupled to a second DC supply terminal and has a drain coupled to the output terminal. A miller capacitance decoupling circuit is coupled between the drain of the first pull-up element and the drain of the first pull-down element. The miller capacitance decoupling circuit is configured to decouple miller capacitance associated with the drains of the pull-up and pull-down elements from the output terminal. Other embodiments are also disclosed.

Abstract: A switching power converting apparatus is capable of converting an input voltage to an output voltage, and includes a transformer, a primary side control module, and a secondary side control module. The secondary side control module utilizes voltage clamping techniques or current-drawing techniques to stop self-excited conversion from the input voltage to the output voltage when the output voltage is greater than a predetermined target voltage, or utilizes a non-self-excited conversion architecture.

Abstract: Among other things, techniques for facilitating a write operation to a bit cell are provided. A pulse generator initializes lowering of an internal voltage level associated with a bit cell that is to be written to by a write operation. In this way, the bit cell is placed into a writeable voltage state, such that a potential of the bit cell can be overcome by the write operation. A voltage detector sends a reset signal to the pulse generator based upon the pulse generator lowering the internal voltage level past a reset trigger level. Responsive to receiving the reset signal, the pulse generator initializes charging of the internal voltage level to an original voltage level. In this way, the lowering of the internal voltage level is controlled so that one or more other bit cells are not affected (e.g., suffer data retention failure) by the relatively lower internal voltage level.

Abstract: The disclosure provides a solid form and a method for preparing the same. The solid form consists essentially of a biodegradable copolymer and an amide-containing compound. The biodegradable copolymer is semi-crystalline due to the dipole-dipole interaction between the biodegradable copolymer and the urea. The method for preparing the above solid form includes: dissolving a biodegradable copolymer and an amide-containing compound in water at a first temperature, obtaining a solution; cooling the solution at a second temperature to form a solid mixture; and the solid mixture is subjected to a freeze-drying process at a third temperature.

Abstract: A method for producing a porous thin film with variable transmittance, includes placing a polymer into an oven for an drying process to remove water vapor from the polymer and obtain a dry polymer; mixing the dry polymer, a salt and a solvent in accordance with a mixing ratio so as to obtain a first mixed solution; placing the first mixed solution into an ultrasonic vibrator, dissolving the salt to form a second mixed solution; coating the second mixed solution on a glass plate to form a solution thin film; placing solution thin film into an exhaust cabinet to obtain a composite thin film; and washing the composite thin film to remove the salt from the composite thin film to obtain a porous thin film wherein the polymer is a polyacrylonitrile, the salt is a lithium chloride, the porous thin film changes its transmittance via dry and wet state.

Abstract: An SRAM multiplexing apparatus comprise a plurality of local multiplexers and a global multiplexer. Each local multiplexer is coupled to a memory bank. The global multiplexer has a plurality of inputs, each of which is coupled to a corresponding output of the plurality of local multiplexers. In response to a decoded address in a read operation, an input of a local multiplexer is forwarded to a corresponding input of the global multiplexer. Similarly, the decoded address allows the global multiplexer to forward the input signal to a data out port via a buffer.

Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.

Abstract: A method for depositing a material on a graphene layer includes arranging a graphene layer having an exposed substantially planar surface proximate to a magnetron assembly that is operative to emit a plasma plume substantially along a first line, wherein the exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the first line where the first line intersects the exposed planar surface; and emitting the plasma plume from the magnetron assembly such that a layer of deposition material is disposed on the graphene layer without appreciably damaging the graphene layer.

Abstract: A color filter substrate for an in-cell optical touch display panel is provided, which includes a substrate, a visible-light shielding structure, a color filter layer and an infrared filter layer. The visible-light shielding structure is disposed on the substrate to define sub-pixel regions and touch sensor regions of the substrate. The color filter layer covers the sub-pixel regions. The infrared filter layer covers the touch sensor regions. The infrared filter layer is made of a single infrared-light permeable material, which has a light transmittance in infrared-light wavelength range greater than a light transmittance in visible-light wavelength range. An in-cell optical touch display panel including the color filter substrate and materials of the infrared filter layer are also provided.

Abstract: A diffusion furnace in the shape of polygonal-prism, including two end frame plates arranged in opposite basal planes of the diffusion furnace and a plurality of heating panels connected between the two end frame plates. Each heating panel includes at least one beam connected between the two end frame plates and a plurality of heating block interconnected in succession along and secured to the respective beam. Each heating block includes a block body, at least one heating element arranged on one side of the block body and amounting assembly mounted on the opposite side of the block body for securing the heating element. Thus, the disclosed diffusion furnace can be customized to satisfy different measurements requirement and can be easily decomposed for repair.

Abstract: Exemplary embodiments for SRAM cells, new control units for SRAM systems, and embodiments of SRAM systems are described herein. An SRAM cell is configured to receive a first input voltage signal and a second input voltage signal with a different value from the first input voltage signal, and to maintain a first stored value signal and a second stored value signal. A control circuit is configured to receive a first input voltage signal and a second input voltage signal, and controlled by a sleep signal, a selection signal, and a data input signal, so that the output of the control circuit is data sensitive to the data input signal. An SRAM system comprises a plurality of SRAM cells, controlled the disclosed control circuit wherein an SRAM cell has two input voltage signals controlled by a data input signal and its complement signal respectively.

Abstract: A system for evacuating gas from a brake booster of a motor vehicle includes: a first conduit adapted to be connected fluidly to the brake booster; an electric pump connected fluidly to the first conduit, and controllable to evacuate gas from the brake booster via the first conduit; a second conduit; an electric valve fluidly connecting the first and second conduits to each other; a mechanical pump connected fluidly to the second conduit, and adapted to be driven by a vehicle drive unit of the motor vehicle to evacuate gas from the brake booster via the first conduit, the electric valve, and the second conduit; and a control unit operatively associated with the electric pump and the electric valve, and configured to control operations of the electric pump and the electric valve according to a working state of the mechanical pump.

Abstract: A method for producing a porous thin film with variable transmittance, includes placing a polymer into an oven for an drying process to remove water vapor from the polymer and obtain a dry polymer; mixing the dry polymer, a salt and a solvent in accordance with a mixing ratio so as to obtain a first mixed solution; placing the first mixed solution into an ultrasonic vibrator, dissolving the salt to form a second mixed solution; coating the second mixed solution on a glass plate to form a solution thin film; placing solution thin film into an exhaust cabinet to obtain a composite thin film; and washing the composite thin film to remove the salt from the composite thin film to obtain a porous thin film wherein the polymer is a polyacrylonitrile, the salt is a lithium chloride, the porous thin film changes its transmittance via dry and wet state.

Abstract: A wavelength converting material comprising a phosphate compound have a chemical formula of ABl-m-nPO4:Mm, Nn, wherein A comprises an alkali metal element, B comprises an alkaline earth metal element, M is a sensitizer comprising a rare-earth element, and N is an acceptor comprising a rare-earth element, wherein 0<m?0.3 and 0<n?0.3.

Abstract: A method to fabricate a novel graphene based, electrically tunable, nanoconstriction device is described. The device includes a back-gate dielectric layer formed over a conductive substrate. The back-gate dielectric layer is, in one example, hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts are formed over a portion of the graphene layer including at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between the at least one source contact, the at least one the drain contact and the at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract: A graphene-based electrically tunable nanoconstriction device and a non-transitory tangible computer readable medium encoded with a program for fabricating the device that includes a back-gate dielectric layer over a conductive substrate are described. The back-gate dielectric layer may be hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts formed over a portion of the graphene layer include at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between at least one source contact, at least one the drain contact and at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract: A graphene-based electrically tunable nanoconstriction device and a non-transitory tangible computer readable medium encoded with a program for fabricating the device that includes a back-gate dielectric layer over a conductive substrate are described. The back-gate dielectric layer may be hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts formed over a portion of the graphene layer include at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between at least one source contact, at least one the drain contact and at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract: A method of providing an oscillating signal, comprising providing a first constant current flowing from a positive power supply node, the first constant current independent of a variation in a positive power supply node voltage, providing a second constant current flowing from a positive power supply node to a second electrode of a capacitor, a first electrode of the capacitor connected directly to the positive power supply node, the second constant current mirroring the first constant current and charging the capacitor by reducing a voltage across the capacitor. A third constant current is provided flowing from the positive power supply node through a first NMOS transistor and mirroring the first constant current, the first NMOS transistor having a gate connected directly to the second electrode of the capacitor and an oscillating signal generated by turning on the first NMOS transistor when the capacitor reaches a predetermined voltage level.

Abstract: A method to fabricate a novel graphene based, electrically tunable, nanoconstriction device is described. The device includes a back-gate dielectric layer formed over a conductive substrate. The back-gate dielectric layer is, in one example, hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts are formed over a portion of the graphene layer including at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between the at least one source contact, the at least one the drain contact and the at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.