Patents by Inventor Tzu-Chi CHOU
Tzu-Chi CHOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240217884Abstract: A core-shell particle includes a core and a shell that is wrapped around the core. The core includes aluminum nitride. The shell includes aluminum and a dopant, and the dopant is yttrium, calcium, magnesium, lanthanum, niobium, titanium, copper, or a combination thereof. The aluminum and the dopant in the shell have a weight ratio of 90:10 to 99.9:0.1. The core-shell particle can be sintered to form a ceramic bulk.Type: ApplicationFiled: December 29, 2022Publication date: July 4, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Sheng-Min YU, Ming-Hui CHANG, Yu-Ming CHEN, Tzu-Chi CHOU, Ying-Hsuan LEE
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Patent number: 11939268Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.Type: GrantFiled: December 23, 2020Date of Patent: March 26, 2024Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Chuang Chiu, Tzu-Yu Liu, Tien-Heng Huang, Tzu-Chi Chou, Cheng-Ting Lin
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Publication number: 20210198154Abstract: A method of forming low-k material is provided. The method includes providing a plurality of core-shell particles. The core of the core-shell particles has a first ceramic with a low melting point. The shell of the core-shell particles has a second ceramic with a low melting point and a low dielectric constant. The core-shell particles are sintered and molded to form a low-k material. The shell of the core-shell particles is connected to form a network structure of a microcrystal phase.Type: ApplicationFiled: December 23, 2020Publication date: July 1, 2021Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Kuo-Chuang CHIU, Tzu-Yu LIU, Tien-Heng HUANG, Tzu-Chi CHOU, Cheng-Ting LIN
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Patent number: 10944115Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.Type: GrantFiled: January 24, 2019Date of Patent: March 9, 2021Assignee: Industrial Technology Research InstituteInventors: Tzu-Chi Chou, Kuo-Chuang Chiu, Tzu-Yu Liu, Yung-Hsiang Juan, Ying-Hao Chu
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Publication number: 20190237769Abstract: A cathode layer and a membrane electrode assembly of a solid oxide fuel cell are provided. The cathode layer consists of a plurality of perovskite crystal films, and the average change rate of linear thermal expansion coefficients of these perovskite crystal films is about 5% to 40% along the thickness direction. The membrane electrode assembly includes the above-mentioned cathode layer, and the linear thermal expansion coefficients of these perovskite crystal films are reduced towards the solid electrolyte layer of the membrane electrode assembly.Type: ApplicationFiled: January 24, 2019Publication date: August 1, 2019Applicant: Industrial Technology Research InstituteInventors: Tzu-Chi Chou, Kuo-Chuang Chiu, Tzu-Yu Liu, Yung-Hsiang Juan, Ying-Hao Chu
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Patent number: 9401433Abstract: A p-type metal oxide semiconductor material is provided, which is composed of AlxGe(1-x)Oy, wherein 0<x?0.6, and 1.0?y?2.0. The p-type metal oxide semiconductor material can be applied in a transistor. The transistor may include a gate electrode, a channel layer separated from the gate electrode by a gate insulation layer, and a source electrode and a drain electrode contacting two sides of the channel layer, wherein the channel layer is the p-type metal oxide semiconductor material.Type: GrantFiled: December 29, 2015Date of Patent: July 26, 2016Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shan-Haw Chiou, Tzu-Chi Chou, Wen-Hsuan Chao, Hsin-Ming Cheng, Mu-Tung Chang, Tien-Heng Huang, Ren-Fong Cai
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Patent number: 9224599Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.Type: GrantFiled: December 19, 2014Date of Patent: December 29, 2015Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shan-Haw Chiou, Tzu-Chi Chou, Chiung-Hui Huang, Yu-Tzu Hsieh
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Publication number: 20150187573Abstract: A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1?3)Ga(1?b)Zn(1+a+b)O4, wherein 0?a?0.1, 0?b?0.1, and 0<a+b?0.16. In particular, the P-type metal oxide semiconductor material has a hole carrier concentration of between 1×1011 cm?3 and 5×1018 cm?3.Type: ApplicationFiled: December 19, 2014Publication date: July 2, 2015Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Shan-Haw CHIOU, Tzu-Chi CHOU, Chiung-Hui HUANG, Yu-Tzu HSIEH
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Patent number: 8927986Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.Type: GrantFiled: September 27, 2013Date of Patent: January 6, 2015Assignee: Industrial Technology Research InstituteInventors: Tzu-Chi Chou, Kuo-Chuang Chiu, Show-Ju Peng, Shan-Haw Chiou, Yu-Tsz Shie
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Publication number: 20140178753Abstract: A lithium ion battery and an electrode structure thereof are provided. The electrode structure at least includes a current collecting substrate, an electrode active material layer on the current collecting substrate, and a complex thermo-sensitive coating layer sandwiched in between the current collecting substrate and the electrode active material layer. The complex thermo-sensitive coating layer at least contains two or more of PTC (positive temperature coefficient) materials so as to have adjustable stepped resistivity according to temperature rise.Type: ApplicationFiled: May 2, 2013Publication date: June 26, 2014Applicant: Industrial Technology Research InstituteInventors: Wen-Bing Chu, Ming-Yi Lu, Guan-Lin Lai, Cheng-Jien Peng, Tzu-Chi Chou, Dar-Jen Liu, Chang-Rung Yang
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Patent number: 8709352Abstract: The disclosure provides a humidity indicator and a method for fabricating the same. The humidity indicator includes a substrate, and a composite disposed on a predetermined region of the substrate. The composite includes a hydrophilic polymer and a Ni-containing compound. The humidity indicators of the disclosure are reusable, halide-free, and cobalt-free, meeting the requirement of environmental friendliness.Type: GrantFiled: April 13, 2011Date of Patent: April 29, 2014Assignee: Industrial Technology Research InstituteInventors: Tzu-Chi Chou, Ren-Der Jean, Hsin-Hung Pan
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Publication number: 20140091302Abstract: The disclosure provides a p-type metal oxide semiconductor material. The p-type metal oxide semiconductor material has the following formula: In1?xGa1?yMx+yZnO4+m, wherein M is Ca, Mg, or Cu, 0<x+y?0.1, 0?m?3, and 0<x, 0?y, or 0?x, 0<y, and wherein a hole carrier concentration of the p-type metal oxide semiconductor material is in a range of 1×1015˜6×1019 cm?3.Type: ApplicationFiled: September 27, 2013Publication date: April 3, 2014Applicant: Industrial Technology Research InstituteInventors: Tzu-Chi CHOU, Kuo-Chuang CHIU, Show-Ju PENG, Shan-Haw CHIOU, Yu-Tsz SHIE
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Publication number: 20120167816Abstract: The disclosure provides a humidity indicator and a method for fabricating the same. The humidity indicator includes a substrate, and a composite disposed on a predetermined region of the substrate. The composite includes a hydrophilic polymer and a Ni-containing compound. The humidity indicators of the disclosure are reusable, halide-free, and cobalt-free, meeting the requirement of environmental friendliness.Type: ApplicationFiled: April 13, 2011Publication date: July 5, 2012Inventors: Tzu-Chi CHOU, Ren-Der Jean, Hsin-Hung Pan