Abstract: A novel MOS or CMOS based active sensor array for producing electronic images from electron-hole producing light. Each pixel of the array includes a layered photodiode for converting the electron-hole producing light into electrical charges and MOS and/or CMOS pixel circuits located under the layered photodiodes for collecting the charges. The present invention also provides additional MOS or CMOS circuits in and/or on the same crystalline substrate for converting the collected charges into images and manipulating image data. The layered photodiode of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. In a preferred embodiment the sensor is a 0.3 mega pixel (3.2 mm×2.4 mm, 640×480) array of 5 micron square pixels which is compatible with a lens of {fraction (1/4.5)} inch optical format.

Abstract: A novel MOS or CMOS based active sensor array for producing electronic images from electron-hole producing light. Each pixel of the array includes a layered photodiode for converting the electron-hole producing light into electrical charges and MOS and/or CMOS pixel circuits located under the layered photodiodes for collecting the charges. The present invention also provides additional MOS or CMOS circuits in and/or on the same crystalline substrate for converting the collected charges into images and manipulating image data. The layered photodiode of each pixel is fabricated as continuous layers of charge generating material on top of the MOS and/or CMOS pixel circuits so that extremely small pixels are possible with almost 100 percent packing factors. In a preferred embodiment the sensor is a 0.3 mega pixel (3.2 mm×2.4 mm, 640×480) array of 5 micron square pixels which is compatible with a lens of {fraction (1/4.5)} inch optical format.