Abstract: A semiconductor device includes a substrate, two first voltage-to-current converters, two second voltage-to-current converters and two third voltage-to-current converters. The substrate includes six layout regions arranged as an array having a plurality of columns and a plurality of rows, the array is line-symmetrical with respect to a first axis and a second axis which are perpendicularly intersected at an array center point of the array. The two first voltage-to-current converters, the two second voltage-to-current converters and the two third voltage-to-current converters are respectively arranged in the six layout regions. With respect to the array center point, layouts of the two first voltage-to-current converters are point-symmetrical, layouts of the two second voltage-to-current converters are point-symmetrical, and layouts of the two third voltage-to-current converters are point-symmetrical.

Abstract: A semiconductor device includes a substrate, two first voltage-to-current converters and two second voltage-to-current converters. The substrate includes four layout regions arranged in an array having a plurality of columns and a plurality of rows. The array is line-symmetrical with respect to a first axis and line-symmetrical with respect to a second axis, wherein the first axis perpendicularly intersects the second axis at an array center point of the array. The two first voltage-to-current converters are respectively arranged in two of the four layout regions, wherein layouts of the two first voltage-to-current converters on the substrate are point-symmetrical with respect to the array center point. The two second voltage-to-current converters are respectively arranged in the other two of the four layout regions, wherein layouts of the two second voltage-to-current converters on the substrate are point-symmetrical with respect to the array center point.

Abstract: A method and a system for detecting a semiconductor device are provided. The method comprises obtaining an image of the semiconductor device, evaluating a feature of the image, detecting a defect of the semiconductor device based on the feature, extracting a defect information for the defect, calculating a defect die ratio (DDR) in response to the defect and analyzing a relation between the DDR and the defect information.

Abstract: An amplifying circuit, comprising: a charging circuit, comprising a plurality of first transistors electrically coupled to a target device; and an output circuit, comprising a plurality of second transistors electrically coupled to the target device. After at least one of the first transistors turns on and the second transistors turn off such that the charging circuit charges the target device to a predetermined voltage, at least one of the first transistors and at least one of the second transistors simultaneously turn on for a predetermined time, and then at least one of the second transistors turns on but the first transistors turns off.

Abstract: Audio amplifier circuit includes a pulse width modulation circuit, an auxiliary loop circuit corresponding to a first variable resistance value and a first variable current value, and a main loop circuit corresponding to a second variable resistance value and a second variable current value. Main loop circuit is coupled between a second node, an output terminal, and a first node. Under a condition that auxiliary loop circuit and main loop circuit are turned on, second variable resistance value is decreased and second variable current value is increased after auxiliary loop circuit enters into a first control state, such that main loop circuit enters into a second control state. First variable resistance value is increased and first variable current value is decreased after main loop circuit enters into second control state, such that auxiliary loop circuit is out of first control state.