Patents by Inventor Tzu-Chien CHENG

Tzu-Chien CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250031399
    Abstract: A semiconductor device with a barrier layer between a gate structure and gate spacer layers, and a method of fabricating the same are disclosed. The a method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, performing a nitridation operation to form a barrier layer on the polysilicon structure and the fin structure, forming gate spacer layers on the barrier layer, forming a source/drain region in the fin structure and adjacent to the barrier layer, annealing the gate spacer layers, and replacing the polysilicon structure with a gate structure.
    Type: Application
    Filed: July 18, 2023
    Publication date: January 23, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mu-Min Hung, Fan Hsuan Chien, Jyh-Nan Lin, Kai-Shiung Hsu, Tzu-Chien Cheng, Su-Yu Yeh
  • Patent number: 9859137
    Abstract: A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: January 2, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chun-Cha Kuo, Wen-Long Lee, Tzu-Chien Cheng, Ding-I Liu
  • Publication number: 20150348847
    Abstract: A method for forming a semiconductor device structure and an apparatus for heating a semiconductor substrate are provided. The method includes spin coating a material layer over a semiconductor substrate. The method also includes heating the material layer by using a first heater above the semiconductor substrate and a second heater below the semiconductor substrate.
    Type: Application
    Filed: May 30, 2014
    Publication date: December 3, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Cha KUO, Wen-Long LEE, Tzu-Chien CHENG, DING-I LIU