Abstract: A method and a system for predicting etching recipe are provided, wherein the method includes steps as follows: Firstly, a plurality of etching recipes of existing etched products and a plurality sets of position-optical measurement values corresponding to the plurality of etching recipes are collected. Then, a supervised learning training is performed according to a plurality of optical measurement values in each set of the position-optical measurement values to build a predicting model. A specification data of a product to be etched including a position-optical parameter is input into this predicting model to obtain a prediction result. Subsequently, according to the prediction result, one of the plurality of etching recipes of the existing etched products is selected as a suggested etching recipe for the product to be etched.

Abstract: A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Abstract: A semiconductor device and a method for manufacturing the same. The method includes steps hereinafter. A substrate is provided with a first dielectric layer thereon. The first dielectric layer is provided with a trench. Then, a metal layer is formed to fill the trench and to cover the surface of the first dielectric layer. The metal layer is partially removed so that a remaining portion of the metal layer covers the first dielectric layer. A treatment process is performed to transform the remaining portion of the metal layer into a passivation layer on the top portion and a gate metal layer on the bottom portion. A chemical-mechanical polishing process is performed until the first dielectric layer is exposed so that a remaining portion of the passivation layer remains in the trench.

Abstract: A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.

Abstract: A method for operating a chemical deposition chamber is disclosed. First, a digital liquid flow controller is provided to guide a precursor fluid into a chemical deposition chamber. Then, a pre-cleaning step is performed in the chemical deposition chamber. Later, a pre-tuning step is performed on the digital liquid flow controller so that the precursor fluid can be substantially stably guided into the chemical deposition chamber. Afterwards, the chemical deposition chamber is used to carry out the chemical deposition.