Patents by Inventor Tzu-Fu Chen

Tzu-Fu Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240154065
    Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a
    Type: Application
    Filed: January 11, 2024
    Publication date: May 9, 2024
    Inventors: Chao-Hsing CHEN, Jia-Kuen WANG, Chien-Chih LIAO, Tzu-Yao TSENG, Tsun-Kai KO, Chien-Fu SHEN
  • Patent number: 11929115
    Abstract: A memory device and an operation method thereof are provided. The memory device includes memory cells, each having a static random access memory (SRAM) cell and a non-volatile memory cell. The SRAM cell is configured to store complementary data at first and second storage nodes. The non-volatile memory cell is configured to replicate and retain the complementary data before the SRAM cell loses power supply, and to rewrite the replicated data to the first and second storage nodes of the SRAM cell after the power supply of the SRAM cell is restored.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jer-Fu Wang, Hung-Li Chiang, Yi-Tse Hung, Tzu-Chiang Chen, Meng-Fan Chang
  • Publication number: 20230288449
    Abstract: The present invention provides a battery probing module, for testing a battery defined with a contact surface having a first electrode area and a second electrode area with different polarities. The battery probing module comprises a frame and a plurality of probe units. The frame has a top plate and a bottom plate opposite to the top plate. Each of the plurality of probe units comprises a base, a first probe, and a plurality of second probes. The base is defined with a top surface and a bottom surface deflectably fixed to the top surface by a fixing unit. The first probe and the plurality of second probes protrude from the bottom surface for contacting the first electrode area and the second electrode area respectively. Wherein the first probe is within a periphery surrounded by the plurality of second probes in a vertical direction of the bottom surface.
    Type: Application
    Filed: March 1, 2023
    Publication date: September 14, 2023
    Inventors: Shih-Ching TAN, Chun-Nan OU, Tzu-Fu CHEN, Chen-Chou WEN, Chiang-Cheng FAN
  • Patent number: D512707
    Type: Grant
    Filed: July 16, 2004
    Date of Patent: December 13, 2005
    Assignee: Enlight Corporation
    Inventors: Tzu-Fu Chen, Ming-Hwa Ching