Abstract: A metallization method for forming multilevel interconnect is disclosed. The method includes firstly providing a first conductor layer on which there is a dielectric layer. A glue layer is then formed on the dielectric layer, followed by forming an opening from top surface of the glue layer to the first conductor layer. After forming a barrier layer on the glue layer and all surfaces in the opening, a second conductor is formed on the barrier layer and fills the opening. Subsequently, the second conductor layer and the barrier layer are removed until the glue layer exposes. A third conductor is defined on the glue layer and the second conductor. The product will solve the problem of high via resistivity caused by stripping solvent and etchant.