Abstract: Various examples of an LED lighting module and a lamp having the LED lighting module are described. An LED lighting module may include an LED lighting member, configured to emit light and including at least one LED, and a monolithic base that is substantially cylindrically shaped with a cavity therein. The monolithic base may include a first distal end, a second distal end opposite the first distal end, a top surface located at the first distal end and including a hole intercommunicating with the cavity, and an exterior surface disposed between the first and the second distal ends. The LED lighting member may be disposed on the top surface. The exterior surface may include one or more screw threads thereon.

Abstract: A multi-chip package comprises a plurality of chip pads and a plurality of LED chips. The chip pads are arranged in an M×N array, M and N each a positive integer greater than 1. A peripheral area of each chip pad comprises a respective first bonding pad, a respective second bonding pad, and a respective third bonding pad arranged in sequence in a clockwise direction. A first orientation of the respective first to third bonding pads in a first row of the N rows differs from a second orientation of the respective first to third bonding pads in a second row of the N rows by 90 degrees. Each of the LED chips is disposed on a respective one of the chip pads and electrically connected to two of the respective first to third bonding pads on a same side of the respective LED chip.

Abstract: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.

Abstract: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.

Abstract: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.

Abstract: The present invention provides a light emitting diode (LED) device. The LED device include a driver, a first LED coupled in series with the driver, and an impedance-providing component coupled in parallel with the first LED and in series with the driver. The impedance-providing component provides a shunt impedance having a value that varies in positive proportion with a variation in an ambient temperature. The driver is respectively coupled in series with the first LED and the at least one impedance-providing component. The driver provides a drive current divided to flow through the first LED and the at least one impedance-providing component according to the shunt impedance and the internal impedance.

Abstract: A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.

Abstract: In one aspect, a light emitting unit comprises: a first semiconductor layer having a first electric property; a second semiconductor layer having a second electric property disposed over the first semiconductor layer; an active layer disposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the second semiconductor layer; a second electrode disposed under the first semiconductor layer; and a phosphor layer disposed on the first semiconductor layer. The phosphor layer covers the active layer and the second semiconductor layer. The first electrode is exposed out of the phosphor layer.

Abstract: An illumination module including a substrate and a plurality of first and second LED chips is provided. The substrate has a plurality of device bonding areas, and each of device bonding areas has two sub-device bonding areas. Each sub-device bonding area has a first, second, and common route. The first routes surround the outer peripheries of each device bonding area. The second routes are located between the two sub-device bonding areas. The common routes are located between the first and second routes. The first LED chips located at the common routes are electrically connected to each other. The second LED chips located at the first and second routes respectly are electrically connected to each other.

Abstract: A circuit structure of a package carrier including a plurality of chip pads, a first electrode, a second electrode, a third electrode and a fourth electrode is provided. These chip pads are arranged in an M×N array. A first bonding pad, a second bonding pad, a third bonding pad and a fourth bonding pad are disposed clockwise in the peripheral area of each chip pad in sequence. The orientations of each of the first, second, third, and fourth bonding pads of the (S?1)th row rotated by 90 degrees are equal to the orientations of each of the first, second, third and fourth bonding pads of the Sth row, respectively. The first electrode is connected with each first bonding pad. The second electrode is connected with each second bonding pad. The third electrode is connected with each third bonding pad. The fourth electrode is connected with each fourth bonding pad.

Abstract: A multi-chip package comprises a plurality of chip pads and a plurality of LED chips. The chip pads are arranged in an M×N array, M and N each a positive integer greater than 1. A peripheral area of each chip pad comprises a respective first bonding pad, a respective second bonding pad, and a respective third bonding pad arranged in sequence in a clockwise direction. A first orientation of the respective first to third bonding pads in a first row of the N rows differs from a second orientation of the respective first to third bonding pads in a second row of the N rows by 90 degrees. Each of the LED chips is disposed on a respective one of the chip pads and electrically connected to two of the respective first to third bonding pads on a same side of the respective LED chip.

Abstract: A light emitting diode (LED) lighting apparatus is provided. The LED lighting apparatus includes a first LED unit and a rectification circuit. The rectification circuit includes a second LED unit. The first LED unit is disposed on a direct current (DC) path. The first LED unit can be used to emit a first light. The rectification circuit is coupled to an alternating current (AC) power source and the first LED unit. The rectification circuit can be used to provide a DC power signal to the DC path. The second LED unit is disposed on a first AC path and coupled between the AC power source and the DC path. The second LED unit can be used to emit a second light to mix the first light for generating a third light.

Abstract: A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.

Abstract: A phosphor coating process for a light-emitting device is described. A light-emitting diode chip is bonded on a substrate. A light-sensitive layer is formed over the light-emitting diode and the substrate. The light-sensitive layer is patterned by a photolithography process to expose an area of the light-emitting diode chip, on which desires a phosphor coating. A phosphor-adhesive material is filled on the area of the light-emitting diode chip.

Abstract: A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.

Abstract: A light emitting semiconductor device is provided, wherein the light emitting semiconductor device comprises a substrate, a plurality of flip chips, a heat conductive board and an insulating board. These flip chips are electrically connected on the substrate. The heat conductive board has a protruding portion used to support the substrate. The insulating board has a plurality of connecting pads and an opening, wherein the protruding portion is sheathed in the opening, so as to expose the substrate. The exposed substrate is then electrically connected to the connecting pads.

Abstract: A method of fabricating a light emitting diode (LED) package structure is provided. A carrier and at least one LED chip having a light emitting surface and a plurality of side surfaces are provided. A first mask having at least one first opening is provided, and the first opening at least exposes the LED chip. A spray coating apparatus is provided above the first mask to perform a first spray coating process. The spray coating apparatus moves back and forth to spray a first phosphor solution over the LED chip so that the light-emitting surface and the side surfaces of the LED chip can be conformally covered by the sprayed first phosphor solution. The first phosphor solution is cured to form a first fluorescent layer by performing a curing process. A molding compound is formed to encapsulate the first fluorescent layer and a portion of the carrier.

Abstract: A circuit structure of a package carrier including a plurality of chip pads, a first electrode, a second electrode, a third electrode and a fourth electrode is provided. These chip pads are arranged in an M×N array. A first bonding pad, a second bonding pad, a third bonding pad and a fourth bonding pad are disposed clockwise in the peripheral area of each chip pad in sequence. The orientations of each of the first, second, third, and fourth bonding pads of the (S?1)th row rotated by 90 degrees are equal to the orientations of each of the first, second, third and fourth bonding pads of the Sth row, respectively. The first electrode is connected with each first bonding pad. The second electrode is connected with each second bonding pad. The third electrode is connected with each third bonding pad. The forth electrode is connected with each forth bonding pad.

Abstract: A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.

Abstract: A light emitting semiconductor device is provided, wherein the light emitting semiconductor device comprises a substrate, a plurality of flip chips, a heat conductive board and an insulating board. These flip chips are electrically connected on the substrate. The heat conductive board has a protruding portion used to support the substrate. The insulating board has a plurality of connecting pads and an opening, wherein the protruding portion is sheathed in the opening, so as to expose the substrate. The exposed substrate is then electrically connected to the connecting pads.