Abstract: A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure includes a substrate and at least one contact plug. The substrate has an epi-layer. The contact plug is formed on the epi-layer and includes a silicide cap disposed on the epi-layer; a conductive pillar disposed on the silicide cap such that the conductive pillar electrically connects to the epi-layer via the silicide cap; and a hybrid liner. The hybrid liner surrounds the conductive pillar and includes a lower portion abutting the silicide cap and having a nitride material and an upper portion abutting the conductive pillar and having an oxidized nitride material. Due to the hybrid liner, a semiconductor structure with increased capacitance and decreased resistivity can be obtained.

Abstract: A method of making a semiconductor device includes manufacturing an ESD cell over a substrate, wherein the ESD cell includes multiple diodes connected in parallel to each other. The method includes manufacturing a conductive pillar electrically connected to the ESD cell of the semiconductor device; manufacturing a through-silicon via (TSV) extending through the substrate, wherein the TSV extends through the substrate within a TSV zone having a TSV zone perimeter, and wherein a first end of the TSV is at a same side of the substrate as the ESD cell, and a second end of the TSV is at a different side of the substrate from the ESD cell. The method includes manufacturing an antenna extending parallel to the TSV at a same side of the substrate as the ESD cell; and manufacturing an antenna pad electrically connected to the TSV, the antenna, and the conductive pillar.

Abstract: A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

Abstract: A semiconductor device may include one or more transistor structures that include a plurality of source/drain regions and a gate structure between the source/drain regions. The semiconductor device may further include one or more dielectric layers between a source/drain contact structure and a gate structure of the one or more of the transistor structures. The one or more dielectric layers may be manufactured using on oxidation treatment process to tune the dielectric constant of the one or more dielectric layers. The dielectric constant of the one or more dielectric layers may be tuned to reduce the parasitic capacitance between the source/drain contact structure and the gate structure (which are conductive structures). In particular, the dielectric constant of the one or more spacer dielectric may be tuned using the oxidation treatment process to lower the as-deposited dielectric constant of the one or more dielectric layers.

Abstract: In some embodiments of the present disclosure, a solid dispersion is provided, comprising: lurasidone or its pharmaceutically acceptable salt and a carrier. The material of the carrier comprises polyvinyl acetate phthalate (PVAP), polyvinyl alcohol (PVA), cellulose acetate phthalate (CAP), mesoporous silica, hydroxypropyl methycellulose (HPMC), polyvinyl caprolactam-polyvinyl acetate-polyethylene glycol graft copolymer, acrylic resin, hydroxypropyl cellulose (HPC), povidone, copovidone, ethyl cellulose, polyoxyethylene glycol, hypromellose acetate succinate (HPMCAS), hypromellose phthalate (HPMCP), or a combination thereof.

Abstract: Disclosed herein are drug-containing vesicles, each of which includes a carbon dot liposome (C-dot liposome) formed by a plurality of Janus particles, which are self-assembled into the C-dot liposome; and a drug encapsulated within the C-dot liposome. Also disclosed herein is a method of producing the drug-containing vesicles. The method includes, mixing a plurality of Janus particles with a drug solution (e.g., an anti-cancer drug solution) to form a mixed solution; and producing the drug-containing vesicles either by a film-hydration method or an injection method. In the film-hydration method, the mixed solution is condensed until a film-like structure is formed; and sonicating the film-like structure in a salt solution to produce the drug-containing vesicle. In the injection method, the mixed solution is rapidly injected into a salt solution to produce the drug-containing vesicle. Also encompasses in the present disclosure are methods for treating a subject afflicted with a cancer.

Abstract: The present invention provides Janus particles and a novel vesicle. In particular, the novel vesicle comprises a plurality of the Janus particles. The Janus particles have symmetric and asymmetric stretching vibrations of CH2 at about 2920 and 2850 cm?1, each with a shoulder, in Fourier transform infrared spectrum.

Abstract: The present invention provides a process for forming Janus particles. The novel application of the Janus particles is also disclosed in the present invention. In particular, the Janus particles have an average diameter less than 10 nm and a peak between 2850 and 2921 cm?1 in Fourier transform infrared spectrum.

Abstract: The present invention provides a process for forming Janus particles. The novel application of the Janus particles is also disclosed in the present invention. In particular, the Janus particles have an average diameter less than 10 nm and a peak between 2850 and 2921 cm?1 in Fourier transform infrared spectrum.

Abstract: The present invention provides Janus particles and a novel vesicle. In particular, the novel vesicle comprises a plurality of the Janus particles. The Janus particles have symmetric and asymmetric stretching vibrations of CH2 at about 2920 and 2850 cm?1, each with a shoulder, in Fourier transform infrared spectrum.

Abstract: The present invention provides a process for forming a substance with a superstructure and a process for forming Janus particles. The novel application of the substance with the superstructure and the Janus particles are also disclosed in the present invention. The substance with the superstructure comprises vesicle and hydrogel. The vesicle and hydrogel are prepared in a solution with different ionic strength range.

Abstract: The present invention provides a process for forming a substance with a superstructure and a process for forming Janus particles. The novel application of the substance with the superstructure and the Janus particles are also disclosed in the present invention. The substance with the superstructure comprises vesicle and hydrogel. The vesicle and hydrogel are prepared in a solution with different ionic strength range.

Abstract: Provided is a compound light-condensing apparatus preferably including a lens body with refractive index n, and light-incident surface and light-ejected surface. The light-ejected surface has one set of Fresnel lens. When an incident light passes through the Fresnel lens structure, a focus with focal length F is formed. Two types of Fresnel lens structure are disposed on a light-ejected surface. More particularly, plural prism bodies are orderly disposed on the second type of Fresnel lens structure. The prism bodies counted from the central line is j and two adjacent prism bodies are spaced by p. The distance Tj is from a base surface to light-ejected surface. An included angle ?j between ejected light and light-ejected surface is formed. By orderly changing the refractive angle of ejected light can be changed for achieving shorter focal length and better light condensation.