Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: The disclosure provides an anti-lock brake device including an oil pressure tank, a valve, and a movable component. The oil pressure tank has an accommodation space, an oil inlet channel, and an oil outlet channel connected to the accommodation space. The valve is slidably located in the oil inlet channel and for sealing or opening an oil inlet of the oil inlet channel. The movable component is located in the accommodation space and has a connecting channel corresponding to the oil inlet and an oil outlet of the oil outlet channel. When the movable component is slid to a depressurized position, the movable component is moved away from the valve for sealing the oil inlet, a first volume is produced between the connecting channel and the oil inlet, and a second volume, smaller than the first volume, is removed from between the connecting channel and the oil outlet.

Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Various embodiments of the present disclosure are directed towards a stacked complementary metal-oxide semiconductor (CMOS) image sensor in which a pixel sensor spans multiple integrated circuit (IC) chips and is devoid of a shallow trench isolation (STI) structure at a photodetector of the pixel sensor. The photodetector and a first transistor form a first portion of the pixel sensor at a first IC chip. A plurality of second transistors forms a second portion of the pixel sensor at a second IC chip. By omitting the STI structure at the photodetector, a doped well surrounding and demarcating the pixel sensor may have a lesser width than it would otherwise have. Hence, the doped well may consume less area of the photodetector. This, in turn, allows enhanced scaling down of the pixel sensor.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor fin. The semiconductor device includes first spacers over the semiconductor fin. The semiconductor device includes a metal gate structure, over the semiconductor fin, that is sandwiched at least by the first spacers. The semiconductor device includes a gate electrode contacting the metal gate structure. An interface between the metal gate structure and the gate electrode has its side portions extending toward the semiconductor fin with a first distance and a central portion extending toward the semiconductor fin with a second distance, the first distance being substantially less than the second distance.

Abstract: Magnetic ion-exchange polymer microspheres and a method for preparing the same are provided. The method for preparing the magnetic ion-exchange polymer microspheres includes swelling the ion-exchange resins and allowing the magnetic nano-particles to enter the interior of the ion-exchange resins. The magnetic ion-exchange resins of the present invention have various functional groups can be introduced onto the surfaces thereof. Therefore, the magnetic ion-exchange resins of the present invention can be applied in many areas, and thereby they have high economic value.

Abstract: Magnetic ion-exchange polymer microspheres and a method for preparing the same are provided. The method for preparing the magnetic ion-exchange polymer microspheres includes swelling the ion-exchange resins and allowing the magnetic nano-particles to enter the interior of the ion-exchange resins. The magnetic ion-exchange resins of the present invention have various functional groups can be introduced onto the surfaces thereof. Therefore, the magnetic ion-exchange resins of the present invention can be applied in many areas, and thereby they have high economic value.