Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.

Abstract: A sample chip for electron microscope includes a first substrate having a film layer, a buffer layer, and a body layer, a spacing layer positioned below the first substrate, and a second substrate positioned below the spacing layer. The buffer layer is positioned on the film layer and has a buffer opening corresponding to an area of the film layer, the body layer is positioned on the buffer layer and has a body opening corresponding to the buffer opening of the buffer layer to expose the area of the film layer corresponding to the buffer opening, the body layer has a thickness of 10 ?m-800 ?m, and etching properties of the film layer, the buffer layer, and the body layer are different. A specimen accommodating space is defined in the spacing layer to correspond to the area of the film layer corresponding to the buffer opening.

Abstract: A sample chip for electron microscope includes a first substrate having a film layer, a buffer layer, and a body layer, a spacing layer positioned below the first substrate, and a second substrate positioned below the spacing layer. The buffer layer is positioned on the film layer and has a buffer opening corresponding to an area of the film layer, the body layer is positioned on the buffer layer and has a body opening corresponding to the buffer opening of the buffer layer to expose the area of the film layer corresponding to the buffer opening, the body layer has a thickness of 10 ?m-800 ?m, and etching properties of the film layer, the buffer layer, and the body layer are different. A specimen accommodating space is defined in the spacing layer to correspond to the area of the film layer corresponding to the buffer opening.

Abstract: The present invention provides a method for inducing death of a cancer cell in a subject in need thereof comprising administering to the subject a pharmaceutically effective amount of Nelumbo Nucifera leave water extract, wherein the Nelumbo Nucifera leave water extract comprises polyphenols.