Abstract: A dynamic random access memory (DRAM) device is provided. The DRAM device includes a circuit substrate, a light emitting element, a first light-permeable thermal dissipation element, and a first light blocking element. At least one DRAM chip is disposed on the circuit substrate. The light emitting element is disposed on the circuit substrate and coupled to the circuit substrate. The first light-permeable thermal dissipation element is disposed on the circuit substrate. The first light blocking element is disposed between the first light-permeable thermal dissipation element and the circuit substrate, and the first light blocking element is disposed on the first light-permeable thermal dissipation element.

Abstract: In certain aspects, the disclosure provides multispecific binders (e.g., ActRIIA:T?RII heteromultimers comprising an ActRIIA polypeptide and a TfiRU polypeptide). The disclosure further provides that such multispecific binders (e.g., ActRIIA:T?RII heteromultimer) may be used to treat various disorders or conditions.

Abstract: In certain aspects, the disclosure provides multispecific binders (e.g., ActRIIB:T?RII heteromultimers comprising an ActRIIB polypeptide and a T?MII polypeptide). In some embodiments, the disclosure provides for novel binders comprising a T?RII polypeptide and a heterologous portion. The disclosure further provides that such multispecific binders (e.g., ActRII:T?RII heteromultimer) may be used to treat various disorders or conditions.