Patents by Inventor TZU-HSU HSU

TZU-HSU HSU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250240015
    Abstract: A multi-channel switch device is provided. The multi-channel switch device includes a first-stage switch circuit, at least one second-stage switch circuit, and multiple third-stage switch circuits. The first-stage switch circuit includes a first common-mode node, a first input/output terminal, and at least one first-stage connection terminal. The second-stage switch circuit includes a second common-mode node, a second-stage transmission terminal, and multiple second-stage connection terminals. Each of the third-stage switch circuits includes a third common-mode node, a third-stage transmission terminal, a reference terminal, and a second input/output terminal. Two of the first input/output terminal and the at least one first-stage connection terminal are connected through the first common-mode node. Two of the second-stage transmission terminal and the second-stage connection terminals are connected through the second common-mode node.
    Type: Application
    Filed: April 10, 2025
    Publication date: July 24, 2025
    Applicant: BRIGHT TOWARD INDUSTRIAL CO., LTD
    Inventors: Tzu-Hsu Hsu, Wen-Cheng Lin
  • Patent number: 12316310
    Abstract: A multi-channel switch device is provided. The multi-channel switch device includes a first-stage switch circuit, at least one second-stage switch circuit, and multiple third-stage switch circuits. The first-stage switch circuit includes a first common-mode node, a first input/output terminal, and at least one first-stage connection terminal. The second-stage switch circuit includes a second common-mode node, a second-stage transmission terminal, and multiple second-stage connection terminals. Each of the third-stage switch circuits includes a third common-mode node, a third-stage transmission terminal, a reference terminal, and a second input/output terminal. Two of the first input/output terminal and the at least one first-stage connection terminal are connected through the first common-mode node. Two of the second-stage transmission terminal and the second-stage connection terminals are connected through the second common-mode node.
    Type: Grant
    Filed: April 21, 2023
    Date of Patent: May 27, 2025
    Assignee: BRIGHT TOWARD INDUSTRIAL CO., LTD
    Inventors: Tzu-Hsu Hsu, Wen-Cheng Lin
  • Publication number: 20240267045
    Abstract: A multi-channel switch device is provided. The multi-channel switch device includes a first-stage switch circuit, at least one second-stage switch circuit, and multiple third-stage switch circuits. The first-stage switch circuit includes a first common-mode node, a first input/output terminal, and at least one first-stage connection terminal. The second-stage switch circuit includes a second common-mode node, a second-stage transmission terminal, and multiple second-stage connection terminals. Each of the third-stage switch circuits includes a third common-mode node, a third-stage transmission terminal, a reference terminal, and a second input/output terminal. Two of the first input/output terminal and the at least one first-stage connection terminal are connected through the first common-mode node. Two of the second-stage transmission terminal and the second-stage connection terminals are connected through the second common-mode node.
    Type: Application
    Filed: April 21, 2023
    Publication date: August 8, 2024
    Applicant: BRIGHT TOWARD INDUSTRIAL CO., LTD
    Inventors: Tzu-Hsu Hsu, Wen-Cheng Lin
  • Publication number: 20170263698
    Abstract: A power metal-oxide-semiconductor (MOS) device is provided. The power MOS device is formed on a semiconductor substrate and includes an active region and a breakdown generated region. The active region includes a plurality of P-type doping regions and a plurality of N-type doping region alternatively arrayed between a source electrode and a drain electrode, and also includes a plurality of gate structures for controlling the conductive state of the active region. The breakdown generated region includes at least one P-type doping region and at least one N-type doping region alternatively arrayed between a source electrode and a drain electrode, and the breakdown voltage of the breakdown generated region is smaller than that of the active region.
    Type: Application
    Filed: June 23, 2016
    Publication date: September 14, 2017
    Inventors: KAO-WAY TU, YUAN-SHUN CHANG, TZU-HSU HSU
  • Patent number: 9735193
    Abstract: A photo relay includes an illuminating unit, a photoelectric conversion IC, a first MOS IC and a second MOS IC. The illuminating unit receives an input signal to generate an illuminating signal. The photoelectric conversion IC receives the illuminating signal to generate a voltage control signal accordingly. The second MOS IC is reversely stacked on the first MOS IC, such that the source electrodes of the two MOS ICs are electrically connected, and the gate electrodes of the two MOS ICs are electrically connected through a gate connection structure for receiving the voltage control signal, and the drain electrodes of the two MOS ICs generate an output signal according to the received voltage control signal.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: August 15, 2017
    Assignee: BRIGHT TOWARD INDUSTRIAL CO., LTD.
    Inventors: Kao-Way Tu, Yuan-Shun Chang, Tzu-Hsu Hsu
  • Publication number: 20170179184
    Abstract: A photo relay includes an illuminating unit, a photoelectric conversion IC, a first MOS IC and a second MOS IC. The illuminating unit receives an input signal to generate an illuminating signal. The photoelectric conversion IC receives the illuminating signal to generate a voltage control signal accordingly. The second MOS IC is reversely stacked on the first MOS IC, such that the source electrodes of the two MOS ICs are electrically connected, and the gate electrodes of the two MOS ICs are electrically connected through a gate connection structure for receiving the voltage control signal, and the drain electrodes of the two MOS ICs generate an output signal according to the received voltage control signal.
    Type: Application
    Filed: November 29, 2016
    Publication date: June 22, 2017
    Inventors: KAO-WAY TU, YUAN-SHUN CHANG, TZU-HSU HSU