Patents by Inventor Tzu-Hsuan Chen

Tzu-Hsuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240145650
    Abstract: A package comprises a substrate including a first surface, and an upper conductive layer arranged on the first surface, a first light-emitting unit arranged on the upper conductive layer, and comprises a first semiconductor layer, a first substrate, a first light-emitting surface and a first side wall, a second light-emitting unit, which is arranged on the upper conductive layer, and comprises a second light-emitting surface and a second side wall, a light-transmitting layer arranged on the first surface and covers the upper conductive layer, the first light-emitting unit, and the second light-emitting unit, a light-absorbing layer, which is arranged between the substrate and the light-transmitting layer in a continuous configuration of separating the first light-emitting unit and the second light-emitting unit from each other, and a reflective wall arranged on the first side wall, wherein a height of the reflective wall is lower than that of the light-absorbing layer.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 2, 2024
    Inventors: Shau-Yi CHEN, Tzu-Yuan LIN, Wei-Chiang HU, Pei-Hsuan LAN, Min-Hsun HSIEH
  • Publication number: 20240072210
    Abstract: A micro light emitting diode structure including an epitaxial structure, a first insulating layer and a second insulating layer is provided. The epitaxial structure includes a first type semiconductor layer, a light emitting layer and a second type semiconductor layer. The first type semiconductor layer, the light emitting layer and a first portion of the second type semiconductor layer form a mesa. A second portion of the second type semiconductor layer is recessed relative the mesa to form a mesa surface. The first insulating layer covers from a top surface of the mesa to the mesa surface along a first side surface of the mesa, and exposes the second side surface. The second insulating layer directly covers a second side surface of the second portion, wherein a thickness ratio of the first insulating layer to the second insulating layer is between 10 and 50.
    Type: Application
    Filed: October 21, 2022
    Publication date: February 29, 2024
    Applicant: PlayNitride Display Co., Ltd.
    Inventors: Chee-Yun Low, Yun-Syuan Chou, Hung-Hsuan Wang, Pai-Yang Tsai, Fei-Hong Chen, Tzu-Yang Lin
  • Publication number: 20240009258
    Abstract: Disclosed herein is an anti-cancer composition that includes an ethanol extract of green propolis, an ethanol extract of wheatgrass, and an ethanol extract of mulberry leaves. Also disclosed herein is use of the anti-cancer composition for inhibiting the growth of cancer cells.
    Type: Application
    Filed: January 31, 2023
    Publication date: January 11, 2024
    Inventors: Yao-Kuan CHEN, Daniel Tzu-Hsuan CHEN, Hui-Min CHIU
  • Publication number: 20200194581
    Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate, and a first well region, a second well region, a third well region and a fourth well region disposed in the semiconductor substrate on the buried layer. The semiconductor device also includes a source region disposed in the second well region, a drain region disposed in the first well region, a gate structure disposed on the first well region and the second well region, and a deep trench isolation structure disposed in the semiconductor substrate and surrounding the source region and the drain region. The second well region surrounds the first well region. The third well region and the fourth well region are located on opposite sides of the second well region. The deep trench isolation structure penetrates through the buried layer.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 18, 2020
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Kai-Chuan KAN, Shu-Wei HSU, Chien-Hsien SONG, Tzu-Hsuan CHEN
  • Patent number: 9972534
    Abstract: A semiconductor device includes a through-substrate via structure, a first metal layer, an electronic component over the through-substrate via structure, a second metal layer and another electronic component below the through-substrate via structure. The through-substrate via structure includes a through hole penetrating from a first surface to an opposite second surface of a semiconductor substrate, and an acute angle is included between a sidewall of the through hole and the second surface on a side of the semiconductor substrate. The through-substrate via structure also includes a conductive layer that fills the through hole, and a semiconductor layer disposed in the through hole and interposed between the conductive layer and the semiconductor substrate.
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: May 15, 2018
    Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Li-Che Chen, Tzu-Hsuan Chen, Hsing-Chao Liu
  • Patent number: 8123241
    Abstract: A foldable baby trailer formed of a bottom frame unit, a trailer bar, a rear upright frame, a handle frame, and a folding control mechanism, two side frame bars and a stretcher frame is disclosed. The stretcher frame that supports a fabric seat panel for the sitting of a baby is held in a sloping position with the transverse front tube thereof spaced above the bottom frame unit at a distance so that when a baby is sitting on the fabric seat panel, the legs of the baby will not touch the ground, avoiding an accident and assuring high level of safety. When turning the handle frame backwardly downwards after pressed the operating button of the folding control mechanism, the foldable baby trailer is collapsed, saving storage space.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: February 28, 2012
    Inventor: Tzu-Hsuan Chen
  • Patent number: D649912
    Type: Grant
    Filed: July 15, 2009
    Date of Patent: December 6, 2011
    Inventor: Tzu-Hsuan Chen