Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: A cathode material particle comprising a plurality of cathode material cores and each cathode material core having plurality of grains and each grain being uniformly covered with a nano-metal oxide layer, wherein a thickness of the nano-metal oxide layer is 1 nm to 100 nm. The cathode material has excellent safety (good thermal stability), high-capacity, good cycleability and high-rate charging or discharging capability.

Abstract: A cathode material particle comprising a plurality of cathode material cores and each cathode material core having plurality of grains and each grain being uniformly covered with a nano-metal oxide layer, wherein a thickness of the nano-metal oxide layer is 1 nm to 100 nm. The cathode material has excellent safety (good thermal stability), high-capacity, good cycleability and-high-rate charging or discharging capability.

Abstract: Cathode material particles with nano-metal oxide layers on the surface, each cathode material particle includes a cathode material core and a nano-metal oxide layer surrounding the cathode material core. The thickness of the nano-metal oxide layer is of 10 nm to 100 nm. The cathode material has excellent safety, high-capacity, good cycleability and high-rate charging or discharging capability. A method for manufacturing the cathode material particles comprises soaking the cathode material cores in a surface improving agent containing metal salt, drying the surface improving agent to deposit the metal salt on the cores and sintering the cores with lithium hydroxide to form the nano-metal oxide layer on the surface around the core. Thereby, the cathode material particles are formed.