Patents by Inventor Tzu-I Tsai

Tzu-I Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor structure and the forming method thereof
    Publication number: 20240145564
    Abstract: The invention provides a semiconductor structure, which comprises a substrate, a gate dielectric layer on the substrate, wherein the gate dielectric layer comprises two sidewall portions and a horizontal portion between the two sidewall portions, wherein a height of the horizontal portion is lower than that of the two sidewall portions, and the horizontal portion and the two sidewall portions are perpendicular to each other, and a gate conductive layer on the horizontal portion of the gate dielectric layer.
    Type: Application
    Filed: November 25, 2022
    Publication date: May 2, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Tzu-I Tsai, Shih-An Huang
  • Semiconductor device and manufacturing method thereof
    Patent number: 9466678
    Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: October 11, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Hsien Huang, Che-Wei Chang, Chih-Chieh Yeh, Tzu-I Tsai
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20160181383
    Abstract: The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial structure, and a recess. The epitaxial structure is disposed in the substrate. The recess is formed in the epitaxial structure, where the recess has a cross-section in a direction perpendicular to the substrate, and at least one portion of the recess is gradually expanded from an opening of the recess.
    Type: Application
    Filed: February 3, 2015
    Publication date: June 23, 2016
    Inventors: Shih-Hsien Huang, Che-Wei Chang, Chih-Chieh Yeh, Tzu-I Tsai