Abstract: A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.

Abstract: A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a dielectric constant smaller than 3.5, and the dielectric layer has a dielectric constant smaller than 3.0.

Abstract: A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.

Abstract: A CMP process for selectively polishing an overlying material layer with an underlying layer comprising at least one material in a semiconductor device fabrication process including providing a semiconductor wafer process surface including a first material layer overlying a second layer including one material; mixing at least two slurry mixtures including a first CMP slurry formulation optimized for removing the first material layer and a second CMP slurry formulation optimized for removing the at least a second layer to form a slurry formulation mixture; and, carrying out a CMP process using the slurry formulation mixture to remove the first material layer and at least a portion of the at least a second layer.

Abstract: A semiconductor substrate has a first copper layer, on which an etch stop layer and a dielectric layer are successively formed. A second copper layer penetrates the dielectric layer and the etch stop layer to electrically connect to the first metal layer. The etch stop layer has a dielectric constant smaller than 3.5, and the dielectric layer has a dielectric constant smaller than 3.0.

Abstract: A new method and structure is provided for the polishing of the surface of a layer of low-k dielectric material. Low-k dielectric material of low density and relatively high porosity is combined with low-k dielectric material of high density and low porosity whereby the latter high density layer is, prior to polishing of the combined layers, deposited over the former low density layer. Polishing of the combined layers removes flaking of the polished low-k layers of dielectric. This method can further be extended by forming conductive interconnects through the layers of dielectric, prior to the layer of dielectric.

Abstract: A slurry system for a chemical mechanical polishing (CMP) process and a method for using the same wherein the slurry system includes an aqueous dispersion comprising at least abrasive polymer containing particles in an alkaline solution having a pH of less than about 9.5; and wherein the method includes providing a semiconductor wafer process surface including a oxide containing material and metal filled semiconductor features; providing the system; and, polishing in a CMP process the semiconductor wafer process surface using the slurry system to remove at least a portion of the oxide containing material and the metal comprising the metal filled semiconductor features.

Abstract: A CMP process for selectively polishing an overlying material layer with an underlying layer comprising at least one material in a semiconductor device fabrication process including providing a semiconductor wafer process surface including a first material layer overlying a second layer including one material; mixing at least two slurry mixtures including a first CMP slurry formulation optimized for removing the first material layer and a second CMP slurry formulation optimized for removing the at least a second layer to form a slurry formulation mixture; and, carrying out a CMP process using the slurry formulation mixture to remove the first material layer and at least a portion of the at least a second layer.