Patents by Inventor Tzu kai Lin
Tzu kai Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11943939Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.Type: GrantFiled: January 4, 2021Date of Patent: March 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Meng-Kai Hsu, Jerry Chang Jui Kao, Chin-Shen Lin, Ming-Tao Yu, Tzu-Ying Lin, Chung-Hsing Wang
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Publication number: 20230253262Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: July 15, 2022Publication date: August 10, 2023Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
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Publication number: 20230095741Abstract: The present disclosure provides a wet chemical heating system and a method of transporting wet chemical. The method includes providing a wet chemical in a conduit, heating the wet chemical by a first radiative heating unit at a first portion of the conduit, including elevating a temperature of the wet chemical at the first portion of the conduit to a first temperature greater than a second temperature of the first portion of the conduit; and dispensing the wet chemical from the conduit.Type: ApplicationFiled: December 1, 2022Publication date: March 30, 2023Inventors: JI JAMES CUI, CHIA-HSUN CHANG, CHIH HUNG CHEN, LIANG-GUANG CHEN, TZU KAI LIN, CHYI SHYUAN CHERN, KEITH KUANG-KUO KOAI
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Patent number: 11517995Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.Type: GrantFiled: June 21, 2019Date of Patent: December 6, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji James Cui, Chia-Hsun Chang, Chih Hung Chen, Liang-Guang Chen, Tzu Kai Lin, Chyi Shyuan Chern, Keith Kuang-Kuo Koai
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Publication number: 20220367200Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.Type: ApplicationFiled: June 20, 2022Publication date: November 17, 2022Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu
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Publication number: 20220352033Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: July 15, 2022Publication date: November 3, 2022Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
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Patent number: 11393727Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: May 8, 2020Date of Patent: July 19, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
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Patent number: 11387109Abstract: A method of forming a semiconductor device includes forming a first epitaxial layer over a substrate to form a wafer, depositing a dielectric layer over the first epitaxial layer, patterning the dielectric layer to form an opening, etching the first epitaxial layer through the opening to form a recess, forming a second epitaxial layer in the recess, etching the dielectric layer to expose a top surface of the first epitaxial layer, and planarizing the exposed top surface of the first epitaxial layer and a top surface of the second epitaxial layer.Type: GrantFiled: March 5, 2021Date of Patent: July 12, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Che-Lun Chang, Pin-Chuan Su, Hsin-Chieh Huang, Ming-Yuan Wu, Tzu kai Lin, Yu-Wen Wang, Che-Yuan Hsu, deseased
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Publication number: 20200266110Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: May 8, 2020Publication date: August 20, 2020Inventors: Shiu-Ko JANGJIAN, Tzu Kai LIN, Chi-Cherng JENG
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Patent number: 10727137Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: July 2, 2018Date of Patent: July 28, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Tzu Kai Lin, Chi-Cherng Jeng
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Publication number: 20200070301Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.Type: ApplicationFiled: June 21, 2019Publication date: March 5, 2020Inventors: JI JAMES CUI, CHIA-HSUN CHANG, CHIH HUNG CHEN, LIANG-GUANG CHEN, TZU KAI LIN, CHYI SHYUAN CHERN, KEITH KUANG-KUO KOAI
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Publication number: 20180323112Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: July 2, 2018Publication date: November 8, 2018Inventors: Shiu-Ko JANGJIAN, Tzu Kai LIN, Chi-Cherng JENG
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Patent number: 10043653Abstract: A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.Type: GrantFiled: August 27, 2012Date of Patent: August 7, 2018Assignee: Taiwan Semiconductor Manufacturing CompanyInventors: Wei-Cheng Chen, Ling-Sung Wang, Chih-Hsun Lin, Tzu kai Lin
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Patent number: 10037921Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: November 18, 2016Date of Patent: July 31, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
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Patent number: 10014224Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: November 7, 2016Date of Patent: July 3, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
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Publication number: 20170076994Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: November 7, 2016Publication date: March 16, 2017Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
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Publication number: 20170069545Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.Type: ApplicationFiled: November 18, 2016Publication date: March 9, 2017Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
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Patent number: 9570557Abstract: Techniques in fabricating a fin field-effect transistor (FinFET) include providing a substrate having a fin structure and forming an isolation region having a top surface with a first surface profile. A dopant species is implanted using a tilt angle to edge portions of the top surface. The edge portions are then removed using an etch process. In this respect, the isolation region is modified to have a second surface profile based on an etching rate that is greater than an etching rate used at other portions of the top surface. The second surface profile has a step height that is smaller than a step height corresponding to the first surface profile. The tilt implantation and etching process can be performed before a gate structure is formed, after the gate structure is formed but before the fin structure is recessed, or after the fin structure is recessed.Type: GrantFiled: April 29, 2015Date of Patent: February 14, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen Cheng Chou, Chung-Ren Sun, Chii-Ming Wu, Cheng-Ta Wu, Tzu kai Lin
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Patent number: 9502538Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: September 11, 2014Date of Patent: November 22, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
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Patent number: 9490365Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.Type: GrantFiled: September 11, 2014Date of Patent: November 8, 2016Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng