Patents by Inventor Tzu kai Lin

Tzu kai Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11211339
    Abstract: A semiconductor device includes a semiconductor die having an insulative layer and a conductive feature in the insulative layer, and a shield in contact with a lateral surface of the conductive feature. In some embodiments, the lateral surface of the conductive feature is aligned with an edge of the insulating material.
    Type: Grant
    Filed: December 4, 2019
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chuei-Tang Wang, Vincent Chen, Tzu-Chun Tang, Chen-Hua Yu, Ching-Feng Yang, Ming-Kai Liu, Yen-Ping Wang, Kai-Chiang Wu, Shou Zen Chang, Wei-Ting Lin, Chun-Lin Lu
  • Publication number: 20200266110
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: May 8, 2020
    Publication date: August 20, 2020
    Inventors: Shiu-Ko JANGJIAN, Tzu Kai LIN, Chi-Cherng JENG
  • Patent number: 10727137
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: July 2, 2018
    Date of Patent: July 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shiu-Ko Jangjian, Tzu Kai Lin, Chi-Cherng Jeng
  • Publication number: 20200070301
    Abstract: The present disclosure provides a wet chemical heating system, including a first conduit for transporting wet chemical, a dispensing head connected to the first conduit, and a radiative heating element configured to heat the wet chemical in the first conduit and positioned at an upper stream of the dispensing head.
    Type: Application
    Filed: June 21, 2019
    Publication date: March 5, 2020
    Inventors: JI JAMES CUI, CHIA-HSUN CHANG, CHIH HUNG CHEN, LIANG-GUANG CHEN, TZU KAI LIN, CHYI SHYUAN CHERN, KEITH KUANG-KUO KOAI
  • Publication number: 20180323112
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: July 2, 2018
    Publication date: November 8, 2018
    Inventors: Shiu-Ko JANGJIAN, Tzu Kai LIN, Chi-Cherng JENG
  • Patent number: 10043653
    Abstract: A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.
    Type: Grant
    Filed: August 27, 2012
    Date of Patent: August 7, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wei-Cheng Chen, Ling-Sung Wang, Chih-Hsun Lin, Tzu kai Lin
  • Patent number: 10037921
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: July 31, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
  • Patent number: 10014224
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: November 7, 2016
    Date of Patent: July 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
  • Publication number: 20170076994
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: November 7, 2016
    Publication date: March 16, 2017
    Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
  • Publication number: 20170069545
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
  • Patent number: 9570557
    Abstract: Techniques in fabricating a fin field-effect transistor (FinFET) include providing a substrate having a fin structure and forming an isolation region having a top surface with a first surface profile. A dopant species is implanted using a tilt angle to edge portions of the top surface. The edge portions are then removed using an etch process. In this respect, the isolation region is modified to have a second surface profile based on an etching rate that is greater than an etching rate used at other portions of the top surface. The second surface profile has a step height that is smaller than a step height corresponding to the first surface profile. The tilt implantation and etching process can be performed before a gate structure is formed, after the gate structure is formed but before the fin structure is recessed, or after the fin structure is recessed.
    Type: Grant
    Filed: April 29, 2015
    Date of Patent: February 14, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chen Cheng Chou, Chung-Ren Sun, Chii-Ming Wu, Cheng-Ta Wu, Tzu kai Lin
  • Patent number: 9502538
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: November 22, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
  • Patent number: 9490346
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: November 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
  • Patent number: 9490365
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Grant
    Filed: September 11, 2014
    Date of Patent: November 8, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shiu-Ko Jangjian, Tzu-Kai Lin, Chi-Cherng Jeng
  • Publication number: 20160322462
    Abstract: Techniques in fabricating a fin field-effect transistor (FinFET) include providing a substrate having a fin structure and forming an isolation region having a top surface with a first surface profile. A dopant species is implanted using a tilt angle to edge portions of the top surface. The edge portions are then removed using an etch process. In this respect, the isolation region is modified to have a second surface profile based on an etching rate that is greater than an etching rate used at other portions of the top surface. The second surface profile has a step height that is smaller than a step height corresponding to the first surface profile. The tilt implantation and etching process can be performed before a gate structure is formed, after the gate structure is formed but before the fin structure is recessed, or after the fin structure is recessed.
    Type: Application
    Filed: April 29, 2015
    Publication date: November 3, 2016
    Inventors: Chen Cheng CHOU, Chung-Ren SUN, Chii-Ming WU, Cheng-Ta WU, Tzu kai LIN
  • Publication number: 20150364580
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of germanium greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 17, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
  • Publication number: 20150364579
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of carbon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 17, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
  • Publication number: 20150364593
    Abstract: A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over the semiconductor substrate. The semiconductor device also includes a gate stack covering a portion of the fin structure and an epitaxially grown source/drain structure over the fin structure and adjacent to the gate stack. The semiconductor device further includes a semiconductor protection layer over the epitaxially grown source/drain structure. The semiconductor protection layer has an atomic concentration of silicon greater than that of the epitaxially grown source/drain structure.
    Type: Application
    Filed: September 11, 2014
    Publication date: December 17, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shiu-Ko JANGJIAN, Tzu-Kai LIN, Chi-Cherng JENG
  • Publication number: 20140053869
    Abstract: A method of cleaning and drying a semiconductor wafer including inserting a semiconductor wafer into a chamber of a cleaning tool, spinning the semiconductor wafer in a range of about 300 revolutions per minute to about 1600 revolutions per minute, and simultaneously spraying the semiconductor wafer with de-ionized water and a mixture of isopropyl alcohol and nitrogen.
    Type: Application
    Filed: August 27, 2012
    Publication date: February 27, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Cheng Chen, Ling-Sung Wang, Chih-Hsun Lin, Tzu kai Lin