Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: A micro light-emitting element including an epitaxial structure, an insulating layer, an electrode structure and a sacrificial layer is provided. The epitaxial structure includes a top surface and a side surface. The insulating layer is disposed on the top surface and the side surface of the epitaxial structure, and the insulating layer includes an opening. The electrode structure is disposed on the top surface of the epitaxial structure and extends through the opening of the insulating layer to be electrically connected to the epitaxial structure. The sacrificial layer is sandwiched between a surface of the insulating layer and the corresponding electrode structure. A micro light-emitting element display device is further provided.

Abstract: The invention uses the control circuit formed on the silicon wafer to detect the leakage current of transistor formed on the depletion mode GaN wafer and then adjust the gate voltage of the depletion mode GaN transistor according to the detected leakage current. Essentially, the gate voltage is reduced or viewed as made more negative when the detected leakage current is larger a specific value. Thus, the gate voltage can be gradually adjusted to approach a specific threshold voltage that right block the leakage current. In other words, by making the gate voltage more negative when non-zero leakage current is detected and even by making the gate voltage more positive when zero leakage current is detected, the depletion mode GaN transistor can be adjusted to have an acceptable or even zero leakage current, a high reaction rate and an optimized efficiency.

Abstract: A grinding machine includes a working grinder and a holding unit. The working grinder includes a grinding wheel mounting section and a power mechanism. A grinding wheel is mounted on the grinding wheel mounting section. The holding unit includes a base, a movable seat, a holding device, and a grinding wheel trimming module. The grinding wheel trimming module includes a transmission shaft box, a motor, a holding claw, and a clamping cylinder. The holding claw is used for holding a trimming grinding wheel. The holding unit further includes a pedestal, and a clamping arm. The clamping arm is provided with a holding end. Thus, the holding end grips and moves the trimming grinding wheel to the holding claw which is driven by the clamping cylinder to clamp the trimming grinding wheel. Then, the holding end releases the trimming grinding wheel.

Abstract: A surface-mount device includes a first electrode, a second electrode, a third electrode, a fourth electrode, a first impedance layer, and a second impedance layer. The first impedance layer is disposed between the first electrode and the second electrode, and is electrically connected to the first electrode and the second electrode in a first direction. The second impedance layer is disposed between the third electrode and the fourth electrode, and is electrically connected to the third electrode and the fourth electrode in a second direction perpendicular to the first direction, and the second impedance layer is interlaced with and electrically isolated with the first impedance layer.

Abstract: An overhead travelling crane system includes a conveyor device, and two clamping devices connected with the conveyor device. The conveyor device includes two lifting units and a traversing unit connected with the lifting units. When in use, each of the clamping devices is moved upward or downward by operation of each of the lifting units of the conveyor device, and is moved leftward or rightward by operation of the traversing unit of the conveyor device. In addition, each of the clamping devices is extended outward to clamp the wheel rim or retracted inward to loosen the wheel rim.

Abstract: An overhead travelling crane system includes a conveyor device, and two clamping devices connected with the conveyor device. The conveyor device includes two lifting units and a traversing unit connected with the lifting units. When in use, each of the clamping devices is moved upward or downward by operation of each of the lifting units of the conveyor device, and is moved leftward or rightward by operation of the traversing unit of the conveyor device. In addition, each of the clamping devices is extended outward to clamp the wheel rim or retracted inward to loosen the wheel rim.