Abstract: An electronic circuit including a plurality of common terminals, a first circuit, a second circuit, and a plurality of switch units is provided. The first circuit is configured to output display driving signals to data lines of a display panel via the common terminals. The second circuit is configured to receive fingerprint sensing signals from fingerprint sensing lines of the display panel via the common terminals. Each of the switch units includes a first terminal coupled to one of the common terminals and a plurality of second terminals coupled to the first circuit and the second circuit. The switch units are grouped into a plurality of groups, and each group corresponds to a fingerprint sensing channel of the second circuit.

Abstract: An electronic circuit for operating with a display panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a first circuit, a second circuit, a third circuit, a first switch circuit and a control circuit. The first circuit generates display driving signals for driving the display panel. The second circuit receives fingerprint sensing signals from the fingerprint sensors. The third circuit determines a touch information according to touch sensing signals from the touch sensors. The first switch circuit includes a plurality of first switch units, each of the first switch units includes a first switch element and a second switch element. The control circuit controls the first switch circuit to transmit the display driving signals in a first time interval, controls the first switch circuit to transmit the fingerprint sensing signals in a second time interval, and controls the third circuit to receive the fingerprint sensing signals in a third time interval.

Abstract: A method for preparing an integrated circuit structure performs a deposition process to form a precursor layer on a substrate, and the precursor layer has a phase transition property in a transition temperature region. Subsequently, a first thermal treating process is performed at a first temperature to transform the precursor layer into a polymorphous layer possessing a predetermined crystalline phase, and the first temperature is higher than an upper limit of the temperature of the transition temperature region.