Abstract: A light-emitting diode (LED) packaging structure is provided, which includes a LED stacked layer, a first silicon substrate and a second silicon substrate. The first and second silicon substrates are respectively disposed on two opposite surfaces of the LED stacked layer. The first and second silicon substrates respectively have at least one first hollow portion and at least one second hollow portion, so as to expose the surfaces of a portion of the LED stacked layer. Light emitted by a light-emitting layer may go out through the first and second hollow portions. A method for manufacturing the LED packaging structure is also provided.

Abstract: A light-emitting diode (LED) packaging structure is provided, which includes a LED stacked layer, a first silicon substrate and a second silicon substrate. The first and second silicon substrates are respectively disposed on two opposite surfaces of the LED stacked layer. The first and second silicon substrates respectively have at least one first hollow portion and at least one second hollow portion, so as to expose the surfaces of a portion of the LED stacked layer. Light emitted by a light-emitting layer may go out through the first and second hollow portions. A method for manufacturing the LED packaging structure is also provided.

Abstract: A semiconductor light emitting device and a package structure thereof are provided. The semiconductor light emitting device includes a substrate, an epitaxial structure layer, a first electrode, a second electrode and a patterned film structure. The substrate has a first surface and a second surface opposite to the first surface. The epitaxial structure layer is disposed on the first surface, and includes a first type semiconductor layer, an active layer and a second type semiconductor layer on the first surface in sequence. The first electrode is formed on an exposed surface of the first type semiconductor layer. The second electrode is formed on an exposed surface of the second type semiconductor layer. The patterned film structure is disposed on the second surface and includes thin films composed of a metamaterial having a negative refraction index.