Abstract: A method for recovering valuable metal elements from a copper-containing metallic material includes steps of: (a) immersing an anode and the copper-containing metallic material serving as a cathode into an electrolyte solution having one of an acidic pH and an alkaline pH; and (b) providing a predetermined voltage to the anode and the cathode such that an electrolysis process conducted under the predetermined voltage on the cathode forms a gaseous film surrounding the cathode, and then the gaseous film is broken down to permit generation of a plasma in the electrolyte solution so as to obtain a solid copper metal or a solid copper oxide that precipitates from the electrolyte solution, and ionic impurities that dissolve in the electrolyte solution.

Abstract: The present disclosure discloses a method for recycling all types of lithium batteries. First, the lithium battery waste is acid-leached to obtain a solution containing most of metal ions. After filtering, the solution is separated from the remaining solids, and then the obtained solution is subjected to separate precipitation many times. After separately adjusting the pH value of the solution many times, adding precipitants with a high selectivity ratio, and matching with filtration and separation reaction, all ions in the lithium battery waste are sequentially precipitated in forms of iron phosphate (FePO4), aluminum hydroxide (Al(OH)3), manganese oxide (MnO2), dicobalt trioxide (cobalt oxide, Co2O3), nickel hydroxide (Ni(OH)2), and lithium carbonate (Li2CO3).

Abstract: A method for recovering metals from tungsten-containing metallic materials includes the steps of: providing a cathode and the tungsten-containing metallic material as an anode in an electrolyte solution which has a neutral, acidic or basic pH value; and subjecting the tungsten-containing metallic material to an electrolysis process under a power density that is greater than 3 W/cm2 on the anode so that a passivation layer formed on the anode during the electrolysis process is broken down to permit the tungsten-containing metallic material to be continuously dissolved and oxidized, and a tungsten-containing compound is formed in the electrolyte solution.

Abstract: The present invention provides a method of forming a passivation layer of a DRAM on a semiconductor wafer. The semiconductor wafer comprises a silicon substrate, and two adjacent gates positioned on the surface of the silicon substrate wherein each gate comprises a spacer on each of two opposite walls. The method comprises forming a first silicon-oxygen-nitride layer of predetermined thickness on the semiconductor wafer, forming a second silicon-oxygen-nitride layer of predetermined thickness on the first silicon-oxygen-nitride layer and forming a BPSG (borophosphosilicate glass) layer uniformly on the second silicon-oxygen-nitride to planarize the surface of the semiconductor wafer. The BPSG layer is used as a dielectric layer. The first silicon-oxygen-nitride layer serves as diffusion barrier layer to prevent diffusion of boron and phosphorous from the BPSG layer into the silicon substrate. The second silicon-oxygen-nitride layer is used as an etching stop layer.