Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A UWB antenna for transportation means comprises a metallic screen, a dielectric substrate and a rectangular printed metallic patch. The dielectric substrate is disposed on the printed metallic patch. The printed metallic patch is disposed on the dielectric substrate, and has a horizontal trench gap and two vertical trench gaps. The horizontal trench gap is parallel to the long side of the rectangular printed metallic patch, and the vertical trench gaps respectively extend upward from each end of the horizontal trench gap to form two resonance contours.