Patents by Inventor Tzu-Ming Wang

Tzu-Ming Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240389293
    Abstract: A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.
    Type: Application
    Filed: July 26, 2024
    Publication date: November 21, 2024
    Inventors: Chun Po Chang, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Wei-Yang Lee, Tzu-Hsiang Hsu
  • Publication number: 20240387663
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a gate electrode layer disposed over a substrate, a source/drain epitaxial feature disposed over the substrate, a first hard mask layer disposed over the gate electrode layer, and a contact etch stop layer (CESL) disposed over the source/drain epitaxial feature. The structure further includes a first interlayer dielectric (ILD) layer disposed on the CESL and a first treated portion of a second hard mask layer disposed on the CESL and the first ILD layer. A top surface of the first hard mask layer and a top surface of the first treated portion of the second mask layer are substantially coplanar. The structure further includes an etch stop layer disposed on the first hard mask layer and the first treated portion of the second mask layer.
    Type: Application
    Filed: July 30, 2024
    Publication date: November 21, 2024
    Inventors: Shih-Che LIN, Tzu-Yang HO, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG
  • Publication number: 20240387447
    Abstract: A method for forming a semiconductor device is provided. The method includes forming first bonding features and a first alignment mark including first patterns in a top die and forming second bonding features and a second alignment mark in a bottom wafer. The method also includes determining a first benchmark and a second benchmark. The method further includes aligning the top die with the bottom wafer using the first alignment mark and the second alignment mark. In a top view, at least two of the first patterns are oriented along a first direction, and at least two of the first patterns are oriented along a second direction that is different from the first direction. The top die is aligned with the bottom wafer by adjusting a virtual axis passing through the first benchmark and the second benchmark to be substantially parallel with the first direction.
    Type: Application
    Filed: May 16, 2023
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Geng-Ming CHANG, Chih-Hang TUNG, Chen-Hua YU, Kuo-Chung Yee, Kewei ZUO, Shou-Yi Wang, Tzu-Cheng LIN, Shih-Wei LIANG
  • Publication number: 20240360551
    Abstract: A semiconductor processing tool includes: a process chamber into which a semiconductor wafer is loaded; a support for securing the wafer loaded into the chamber tool; an inlet which introduces a first gas into the chamber for processing the wafer; and an exhaust system that exhausts gas from the chamber. The exhaust system includes: a first line coupled to the chamber to exhaust gas from the chamber; and a pump to draw gas through the first line from the chamber. The tool further includes a heating module having: a second line coupled to the first and a supply of a second gas, the second gas being flowed through the second line from the supply into the first line; and a heating element contained in the second line, the heating element heating the second gas in the second line before the second gas is flowed into the first line.
    Type: Application
    Filed: April 28, 2023
    Publication date: October 31, 2024
    Inventors: Sheng-chun Yang, Yi-Ming Lin, Chun Chang, Che Kang Liu, Kaijun Jan, Xuan-Yang Zheng, Tzu-Chuan Chao, Weigang Wu, Chih-Yuan Wang, Ren-Jyue Wang
  • Publication number: 20240355953
    Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.
    Type: Application
    Filed: June 27, 2024
    Publication date: October 24, 2024
    Inventors: Jyh-Ming HUNG, Tzu-Jui WANG, Kuan-Chieh HUANG, Jhy-Jyi SZE
  • Publication number: 20240276240
    Abstract: A method for signal optimization between a user equipment and a reconfigurable intelligence surface includes a phase optimization step having: generating at least one modified phase combination in the state that a performance index of a current phase combination is smaller than a preset performance threshold value; evaluating whether a corresponding performance index of the modified phase combination is not smaller than the preset performance threshold value or evaluating whether the performance index of the modified phase combination is larger than the corresponding performance index of the current phase combination, to determine an optimized phase combination, enabling a corresponding performance index to be not smaller than the preset performance threshold value or not smaller than the performance index of any modified phase combination in the phase optimization step; and replacing the current phase combination by the optimized phase combination to form an updated current phase combination.
    Type: Application
    Filed: May 5, 2023
    Publication date: August 15, 2024
    Inventors: Chao-Kai WEN, Feng-Ji CHEN, Tzu-Hao HUANG, De-Ming CHIAN, Chuan-Yuan WANG
  • Patent number: 12055228
    Abstract: A valve for throttling gas flow from a semiconductor processing tool includes a valve body. A shaft extends through the valve body. The shaft defines an internal cavity and a first opening communicating with the internal cavity. A first deflector is positioned on the shaft proximate the first opening and directed at a first interface between the shaft and the valve body. A method for throttling gas flow from a semiconductor processing tool includes providing a gas in an internal cavity defined in a shaft of a valve and directing the gas through an opening defined in the shaft and communicating with the bore toward an interface between the shaft and a valve body of the valve supporting the shaft.
    Type: Grant
    Filed: April 8, 2022
    Date of Patent: August 6, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Sheng-Chun Yang, Po-Chih Huang, Chang Chun, Xuan-Yang Zheng, Tzu-Chuan Chao, Ren-Jyue Wang, Yi-Ming Lin
  • Patent number: 12051763
    Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.
    Type: Grant
    Filed: July 25, 2023
    Date of Patent: July 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jyh-Ming Hung, Tzu-Jui Wang, Kuan-Chieh Huang, Jhy-Jyi Sze
  • Patent number: 12044844
    Abstract: An calibration kit includes a base, a combination of calibration parts, and a manipulation part. The combination of calibration parts is disposed on the base and includes a first calibration part and a second calibration part. The first calibration part has a first calibration surface. The second calibration part has a second calibration surface. The first calibration part and the second calibration part are relatively movable in a movement direction and are movable relative to the base. The manipulation part is movably or rotatably disposed on the base. The manipulation part is configured to be operable to drive the first calibration part and the second calibration part to move in the movement direction relative to the base, so that the combination of calibration parts forms a three-dimensional calibration surface configuration through the first calibration surface and the second calibration surface.
    Type: Grant
    Filed: September 6, 2021
    Date of Patent: July 23, 2024
    Assignee: Qisda Corporation
    Inventors: Tzu-Huan Hsu, Po-Fu Wu, Yuan-Yu Hsiao, Ching-Huey Wang, Chih-Kang Peng, Chun-Ming Shen, Chih-Ming Hu, Yi-Ling Lo
  • Publication number: 20230387163
    Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including an optical device within or on a semiconductor substrate. A light guide structure overlies the optical device. A first etch stop layer extends along first sidewalls and a lower surface of the light guide structure. A second etch stop layer overlies the first etch stop layer and extends along second sidewalls of the light guide structure.
    Type: Application
    Filed: July 28, 2023
    Publication date: November 30, 2023
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Tzu-Ming Wang
  • Patent number: 11769778
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor. The method includes forming a photodetector in a substrate. A lower interconnect portion of an interconnect structure is formed over the photodetector. A removal process is performed to define a first opening overlying the photodetector in the lower interconnect portion. A lower etch stop layer is formed lining the first opening. The lower etch stop layer has a U-shape in the first opening. An upper interconnect portion of the interconnect structure is formed over the lower etch stop layer. A light pipe structure is formed overlying the photodetector. The U-shape of the lower etch stop layer extends continuously along sidewalls and a bottom surface of the light pipe structure.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: September 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Tzu-Ming Wang
  • Publication number: 20230070530
    Abstract: A radio frequency receiving device with automatic gain control includes a filtering module, a radio frequency processing module, a controlling unit and a displaying unit. The filtering module is configured to filter a radio frequency signal to generate a filtered signal. The radio frequency processing module includes an amplifier, a detecting circuit and an automatic gain control circuit. The amplifier amplifies the filtered signal to generate a radio frequency output signal. The detecting circuit detects the filter signal to generate a detected signal. The controlling unit generates at least one intensity signal according to the detected signal, and judges the detected signal to generate an automatic gain control signal. The automatic gain control circuit controls the radio frequency output signal according to the automatic gain control signal. The displaying unit turns on or off a plurality of light emitters according to the at least one intensity signal.
    Type: Application
    Filed: August 3, 2022
    Publication date: March 9, 2023
    Inventors: Mao-Jung LIN, Ching-Yuan WANG, Tzu-Ming WANG
  • Publication number: 20210384244
    Abstract: Various embodiments of the present disclosure are directed towards a method for forming an image sensor. The method includes forming a photodetector in a substrate. A lower interconnect portion of an interconnect structure is formed over the photodetector. A removal process is performed to define a first opening overlying the photodetector in the lower interconnect portion. A lower etch stop layer is formed lining the first opening. The lower etch stop layer has a U-shape in the first opening. An upper interconnect portion of the interconnect structure is formed over the lower etch stop layer. A light pipe structure is formed overlying the photodetector. The U-shape of the lower etch stop layer extends continuously along sidewalls and a bottom surface of the light pipe structure.
    Type: Application
    Filed: August 19, 2021
    Publication date: December 9, 2021
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Tzu-Ming Wang
  • Patent number: 11121162
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: September 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Tzu-Ming Wang
  • Patent number: 11040055
    Abstract: Methods and compositions for treating diabetic retinopathy employ an ophthalmic, topical formulation of micro-RNA 195 packaged in or on a nanoparticle or vesicle.
    Type: Grant
    Filed: December 12, 2017
    Date of Patent: June 22, 2021
    Assignee: China Medical University
    Inventors: Suh-Hang Hank Juo, Chung-Ling Liang, Tzu-Ming Wang
  • Publication number: 20200357837
    Abstract: Various embodiments of the present disclosure are directed towards an image sensor including a light pipe structure. A photodetector disposed within a semiconductor substrate. A gate electrode is over the semiconductor substrate and borders the photodetector. An inter-level dielectric (ILD) layer overlies the semiconductor substrate. A conductive contact is disposed within the ILD layer such that a bottom surface of the conductive contact is below a top surface of the gate electrode. The light pipe structure overlies the photodetector such that a bottom surface of the light pipe structure is recessed below a top surface of the conductive contact.
    Type: Application
    Filed: May 7, 2019
    Publication date: November 12, 2020
    Inventors: Tsun-Kai Tsao, Jiech-Fun Lu, Shih-Pei Chou, Tzu-Ming Wang
  • Publication number: 20190321389
    Abstract: Methods and compositions for treating diabetic retinopathy employ an ophthalmic, topical formulation of micro-RNA 195 packaged in or on a nanoparticle or vesicle.
    Type: Application
    Filed: December 12, 2017
    Publication date: October 24, 2019
    Inventors: Suh-Hang Hank JUO, Chung-Ling LIANG, Tzu-Ming WANG
  • Patent number: 9372508
    Abstract: A flexible display device includes a base, a flexible display panel, a detecting unit and a control unit. The flexible display includes a touch control unit that could be exposed outside of or received within the base. The detecting unit is used to detect the operating state of the flexible display panel. Then, the control unit controls the touch control unit according to a detected result of the detecting unit. Accordingly, the flexible display device according to the present invention may effectively reduce the accidental contact-induced malfunctions.
    Type: Grant
    Filed: October 4, 2010
    Date of Patent: June 21, 2016
    Assignee: E Ink Holdings Inc.
    Inventor: Tzu-Ming Wang
  • Patent number: 9019171
    Abstract: An electric device with multi-screen includes a plurality of display modules and a plurality of flexible printed circuit boards. The display modules are electrically connected to each other by the flexible circuit printed boards. The display modules may display different images simultaneously for providing user different purposes. Furthermore, the electric device with multi-screen not only uses flexible circuit printed boards for connecting the display modules, the flexible display panel may be used in the display modules, so that the portable electric device with multi-screen may be flexible and the applications thereof may be increased.
    Type: Grant
    Filed: March 20, 2009
    Date of Patent: April 28, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Yi-Ching Wang, Po-Wen Hsiao, Ted-Hong Shinn, Tzu-Ming Wang
  • Patent number: 8970640
    Abstract: The present invention provides a drive method for an electronic paper display. The method comprises to display a present image. Then, color data of pixels of the present image is gathered. The color data is compared to select one of a first color and a second color to be as a main color. Finally, a refresh image is displayed in the electronic paper display following the present image based on the main color.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: March 3, 2015
    Assignee: E Ink Holdings Inc.
    Inventors: Tzu-Ming Wang, Kai-Cheng Chuang